IPD03N03LB G IPS03N03LB G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.3 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 75
6 cm
2
cooling area
5)
--50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=70 µA
1.2 1.6 2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 10 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=60 A
- 4.1 5.1
mΩ
V
GS
=4.5 V, I
D
=60 A,
SMD version
- 3.9 4.9
V
GS
=10 V, I
D
=60 A
- 3.0 3.5
V
GS
=10 V, I
D
=60 A,
SMD version
- 2.8 3.3
Gate resistance
R
G
- 1.3 -
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=60 A
60 120 - S
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
1)
Current is limited by bondwire; with an R
thJC
=1.3 K/W the chip is able to carry 142 A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle D <0.25 for V
GS
<-5 V
1)
J-STD20 and JESD22
Rev. 1.7 page 2 2008-04-11
