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IPD03N03LB G

P1-P3P4-P6P7-P9P10-P10
IPD03N03LB G IPS03N03LB G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 Ω
V
GS
=f(Q
gate
); I
D
=45 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
5 V
15 V
20 V
0
2
4
6
8
10
12
0204060
Q
gate
[nC]
V
GS
[V]
20
22
24
26
28
30
32
34
36
38
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
1
10
100
1 10 100 1000
t
AV
[µs]
I
AV
[A]
Rev. 1.7 page 7 2008-04-11
IPD03N03LB G IPS03N03LB G
Package Outline PG-TO252-3-11
PG-TO252-3-11: Outline
Rev. 1.7 page 8 2008-04-11
IPD03N03LB G IPS03N03LB G
Package Outline PG-TO251-3-11
Rev. 1.7 page 9 2008-04-11
P1-P3P4-P6P7-P9P10-P10

IPD03N03LB G

Mfr. #:
Buy IPD03N03LB G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 90A DPAK-2
Lifecycle:
New from this manufacturer.
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