OMO ElectronicOMO Electronic
Expand menu
0 Cart

AD8351SCPZ-EP-R7

P1-P3P4-P6P7-P9P10-P12
Low Distortion Differential RF/IF Amplifier
Enhanced Product
AD8351-EP
Rev.
A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
−3 dB bandwidth of 2.2 GHz for A
V
= 12 dB
Single-resistor programmable gain: 0 dB ≤ A
V
≤ 26 dB
Differential interface
Low noise input stage: 2.70 nV/√Hz at 70 MHz, A
V
= 10 dB
Low harmonic distortion
−79 dBc second at 70 MHz
−81 dBc third at 70 MHz
Output third-order intercept (OIP3) of 31 dBm at 70 MHz
Single-supply operation: 3 V to 5.5 V
Low power dissipation: 28 mA at 5 V
Adjustable output common-mode voltage
Fast settling and overdrive recovery
Slew rate of 13,000 V/µs
Power-down capability
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Product change notification
Qualification data available upon request
APPLICATIONS
Differential ADC drivers
Single-ended-to-differential conversion
IF sampling receivers
RF/IF gain blocks
Surface acoustic wave (SAW) filter interfacing
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The AD8351-EP is a low cost differential amplifier useful in RF
and IF applications up to 2.2 GHz. The voltage gain can be set
from unity to 26 dB using a single external gain resistor. The
AD8351-EP provides a nominal 150 Ω differential output
impedance. The excellent distortion performance and low noise
characteristics of this device allow a wide range of applications.
The AD8351-EP is designed to satisfy the demanding
performance requirements of communications transceiver
applications. The device can be used as a general-purpose gain
block, an ADC driver, and a high speed data interface driver,
among other functions. The AD8351-EP can also be used as a
single-ended-to-differential amplifier with similar distortion
products as in the differential configuration. The exceptionally
good distortion performance makes the AD8351-EP an ideal
solution for 12-bit and 14-bit IF sampling receiver designs.
Fabricated in the Analog Devices, Inc., high speed XFCB
process, the AD8351-EP has a high bandwidth that provides
high frequency performance and low distortion. The quiescent
current of the AD8351-EP
is 28 mA typically. The AD8351-EP
amplifier comes in a 16-lead LFCSP package, and operates over
the temperature range of −55°C to +105°C.
Additional application and technical information can be found
in the AD8351 datasheet.
VOCM
VPOS
OPHI
OPLO
COMM
PWUP
RGP1
INHI
INLO
RGP2
AD8351-EP
BIAS CELL
14821-001
AD8351-EP Enhanced Product
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................5
Maximum Power Dissipation ......................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
9/2016—Rev. 0 to Rev. A
Change to Quiescent Current Parameter, Table 1 ........................ 3
Changes to Ordering Guide .......................................................... 12
7/2016—Revision 0: Initial Version
Enhanced Product AD8351-EP
Rev. A | Page 3 of 12
SPECIFICATIONS
V
S
= 5 V, R
L
= 150 Ω, R
G
= 110 Ω (A
V
= 10 dB), f = 70 MHz, T = 25°C, parameters specified differentially, unless otherwise noted. The
gain (A
V
) can be set to any value between 0 dB and 26 dB.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth A
V
= 6 dB, V
OUT
≤ 1.0 V p-p 3000 MHz
A
V
= 12 dB, V
OUT
≤ 1.0 V p-p 2200 MHz
A
V
= 18 dB, V
OUT
≤ 1.0 V p-p 600 MHz
Bandwidth for 0.1 dB Flatness 0 dB ≤ A
V
≤ 20 dB, V
OUT
≤ 1.0 V p-p 200 MHz
Bandwidth for 0.2 dB Flatness 0 dB ≤ A
V
≤ 20 dB, V
OUT
≤ 1.0 V p-p 400 MHz
Gain Accuracy Using 1% resistor for R
G
, 0 dB ≤ A
V
≤ 20 dB ±1 dB
Gain Supply Sensitivity V
S
± 5% 0.08 dB/V
Gain Temperature Sensitivity −55°C to +105°C 3.9 mdB/°C
Slew Rate R
L
= 1 kΩ, V
OUT
= 2 V step 13,000 V/µs
R
L
= 150 Ω, V
S
= 2 V step
V/µs
Settling Time 1 V step to 1% <3 ns
Overdrive Recovery Time V
IN
= 4 V to 0 V step, V
OUT
≤ ±10 mV <2 ns
Reverse Isolation (S12) −67 dB
INPUT/OUTPUT CHARACTERISTICS
Input Common-Mode Voltage Adjustment Range 1.2 to 3.8 V
Maximum Output Voltage Swing 1 dB compressed 4.75 V p-p
Output Common-Mode Offset 40 mV
Output Common-Mode Drift −55°C to +105°C 0.24 mV/°C
Output Differential Offset Voltage 20 mV
Output Differential Offset Drift −55°C to +105°C 0.13 mV/°C
Input Bias Current ±15 µA
Input Resistance
1
5 kΩ
Input Capacitance
1
0.8 pF
Common-Mode Rejection Ratio (CMRR)
dB
Output Resistance
1
150 Ω
Output Capacitance
1
0.8 pF
POWER INTERFACE
Supply Voltage 3 5.5 V
PWUP Threshold 1.3 V
PWUP Input Bias Current PWUP at 5 V 100 µA
PWUP at 0 V 25 µA
Quiescent Current −55°C to +105°C 28 35 mA
NOISE/DISTORTION
10 MHz
Second/Third Harmonic Distortion
2
R
L
= 1 kΩ, V
OUT
= 2 V p-p
dBc
R
L
= 150 Ω, V
OUT
= 2 V p-p −80/−69 dBc
Third-Order Intermodulation Distortion (IMD) R
L
= 1 kΩ, f1 = 9.5 MHz, f2 = 10.5 MHz,
V
OUT
= 2 V p-p composite
−90 dBc
R
L
= 150 Ω, f1 = 9.5 MHz, f2 = 10.5 MHz,
V
OUT
= 2 V p-p composite
−70 dBc
Output Third-Order Intercept f1 = 9.5 MHz, f2 = 10.5 MHz 33 dBm
Noise Spectral Density (Referred to Input (RTI)) 2.65 nV/√Hz
1 dB Compression Point 13.5 dBm
P1-P3P4-P6P7-P9P10-P12

AD8351SCPZ-EP-R7

Mfr. #:
Buy AD8351SCPZ-EP-R7
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier EP LFCSP Package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet