IPS511/IPS511S
2 www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th
1 Thermal resistance
junction to case
—
#
—
R
th
2 Thermal resistance junction to ambient —
$ —
R
th
1 Thermal resistance with standard footprint —
60
—
R
th
2 Thermal resistance with 1" square footprint —
40
—
R
th
3 Thermal resistance junction to case — # —
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T
j
= 25
o
C unless otherwise specified).
Symbol Parameter Min. Max. Units Test Conditions
V
out
Maximum output voltage V
cc
-50 V
cc
+0.3
V
offset
Maximum logic ground to load ground offset V
cc
-50 V
cc
+0.3
V
in
Maximum Input voltage -0.3 5.5
V
cc max Maximum Vcc voltage
—
50
I
in, max.
Maximum IN current -5 10 mA
V
dg
Maximum diagnostic output voltage -0.3 5.5 V
I
dg, max
Maximum diagnostic output current -1 10 mA
I
sd cont.
Diode max. permanent current
(1)
— 2.2
I
sd pulsed
Diode max. pulsed current
(1)
—10
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
P
d Maximum power dissipation
(1)
(TC=25
o
C) IPS511 — 25
(rth=80
o
C/W) IPS511S — 1.56
T
j
max. Max. storage & operating junction temp. -40
+150
T
lead
Lead temperature (soldering 10 seconds) — 300
V
A
kV
W
o
C