Features
Over temperature protection (with auto-restart)
Short-circuit protection (current limit )
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
IPS511/IPS511S
Data Sheet No.PD 60155H
Description
The IPS511/IPS511S are fully protected five terminal
high side switches with built in short circuit, over-tem-
perature, ESD protection, inductive load capability
and diagnostic feedback. The output current is con-
trolled when it reaches I
lim
value. The current
limitation is activated until the thermal protection
acts. The over-temperature protection turns off the
high side switch if the junction temperature exceeds
Tshutdown. It will automatically restart after the junc-
tion has cooled 7
o
C below Tshutdown. A diagnostic
pin is provided for status feedback of short-circuit,
over-temperature and open load detection. The double
level shifter circuitry allows large offsets between the
logic ground and the load ground.
Packages
Product Summary
R
ds(on)
135m(max)
V
clamp
50V
I Limit 5A
V
open load
3V
Typical Connection
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
5 Lead
D
2
Pak (SMD220
IPS511S
Load
Logic
signal
control
Logic
Logic Gnd
Load Gnd
Vcc
Out
Gnd
In
Dg
+ 5v
Status
feedback
+ VCC
Output pull-up resistor
Rdg
Rin
15K
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
H
L
L (cycling)
L
L (limiting)
Dg
H
L
H
H
L
L
L
L
5 Lead
TO220
IPS511
www.irf.com 1
IPS511/IPS511S
2 www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th
1 Thermal resistance
junction to case
#
R
th
2 Thermal resistance junction to ambient
$
R
th
1 Thermal resistance with standard footprint
60
R
th
2 Thermal resistance with 1" square footprint
40
R
th
3 Thermal resistance junction to case #
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T
j
= 25
o
C unless otherwise specified).
Symbol Parameter Min. Max. Units Test Conditions
V
out
Maximum output voltage V
cc
-50 V
cc
+0.3
V
offset
Maximum logic ground to load ground offset V
cc
-50 V
cc
+0.3
V
in
Maximum Input voltage -0.3 5.5
V
cc max Maximum Vcc voltage
50
I
in, max.
Maximum IN current -5 10 mA
V
dg
Maximum diagnostic output voltage -0.3 5.5 V
I
dg, max
Maximum diagnostic output current -1 10 mA
I
sd cont.
Diode max. permanent current
(1)
2.2
I
sd pulsed
Diode max. pulsed current
(1)
—10
ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0Ω, L=10µH
P
d Maximum power dissipation
(1)
(TC=25
o
C) IPS511 25
(rth=80
o
C/W) IPS511S 1.56
T
j
max. Max. storage & operating junction temp. -40
+150
T
lead
Lead temperature (soldering 10 seconds) 300
V
A
kV
W
o
C
IPS511/IPS511S
www.irf.com 3
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
ds(on)
ON state resistance T
j
= 25
o
C 110 135
@Tj=25
o
C
R
ds(on)
ON state resistance @ V
cc
= 6V 110 135
(V
cc
=6V)
R
ds(on)
ON state resistance Tj = 150
o
C—
200
V
in
= 5V, I
out
= 2.5A
@Tj=150
o
C
V
cc oper. Operating voltage range 5.5
35
V clamp 1 V
cc
to OUT clamp voltage 1
50 56
I
d
= 10mA (see Fig.1 & 2)
V clamp 2
V
cc
to OUT clamp voltage 2
58 65
V
f
Body diode forward voltage 0.9
1.2 I
d
= 2.5A,
V
in
= 0V
I
cc off
Supply current when OFF 16 50
µAV
in
= 0V,
V
out
= 0V
I
cc on
Supply current when ON 0.7 2 mA
V
in
= 5V
I
cc ac
Ripple current when ON (AC RMS)
20
µAV
in
= 5V
V
dgl
Low level diagnostic output voltage 0.15 0.4 V
I
dg
= 1.6 mA
I
oh
Output leakage current 60 110
V
out
= 6V
I
ol
Output leakage current 0 25
V
out
= 0V
Idg
leakage
Diagnostic output leakage current
——
10 V
dg
= 5.5V
V
ih
IN high threshold voltage 2.3 3
V
il
IN low threshold voltage 1 1.95
I
in
,
on
On state IN positive current
70
200
µA
V
in
= 5V
In hyst. Input hysteresis 0.1 0.25 0.5
V
Static Electrical Characteristics
(T
j
= 25
o
C, V
cc
= 14V unless otherwise specified.)
m
V
in
= 5V, I
out
= 2.5A
I
d
= I
sd
(see Fig.1 & 2)
V
V
in
= 5V, I
out
= 1A
µA
V
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
cc
Continuous V
cc
voltage
5.5
35
V
IH
High level input voltage 4 5.5
V
IL
Low level input voltage
-0.3 0.9
I
out
Continuous output current
Tamb=85
o
C (
TAmbient = 85
o
C, Tj = 125
o
C, R
th
< 60
o
C/W) IPS511 1.7
(
TAmbient = 85
o
C, Tj = 125
o
C, R
th
= 80
o
C/W) IPS511 1.5
R
in
Recommended resistor in series with IN pin 4
6
R
dg
Recommended resistor in series with DG pin 10
20
V
A
k

IPS511S

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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