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IPS511S

P1-P3P4-P6P7-P9P10-P12P13-P13
IPS511/IPS511S
www.irf.com 7
Figure 7 - R
ds(on)
(mΩ) Vs V
cc
(V)
Figure 8 - Normalized R
ds(on) (%)
Vs T
j
(
o
C)
0
50
100
150
0 5 10 15 20 25 30 35
Figure 10 - Max. I
out
(A) Vs Load Inductance (uH)
Figure 9 - Rds(on) (mΩ) Vs I
out
(A)
0
50
100
150
012345
0.1
1
10
50%
100%
150%
200%
-50 0 50 100 150
IPS511/IPS511S
8 www.irf.com
Figure 11a - Max load current (A) Vs Tamb (
o
C)
IPS511
Figure 11b - Max load current (A) Vs Tamb (
o
C)
IPS511S
0
1
2
3
4
5
25 50 75 100 125 150
Free air
Rthja= 40°C/W
Rthja= 20°C/W
Rthja= 10°C/W
0
1
2
3
4
5
25 50 75 100 125 150
1inch² footprint
Rthja= 35°C/W
Std. footprint
Rthja= 60°C/W
Figure 12 - Transient Thermal Impedance (
o
C/W)
Vs Time (S)
Figure 13 - I
lim
(A) Vs T
j
(
o
C)
0
1
2
3
4
5
6
-50 0 50 100 150
0.01
0.1
1
10
100
IPS511/IPS511S
www.irf.com 9
Resistive load
0
200
400
600
0123
Eo n
Eo f f
Figure 14 - E
on,
E
off (µJ)
(A) Vs I
out
(A) Figure 15 - E
on (µJ)
Vs Load Inductance
(µH)
(see Fig. 3)
Figure 16 - Diag Blanking time (µS) Vs I
out
(A)
(resistive load - see Fig. 6)
0.1
1
10
100
1000
10000
1E+01
1E+02
1E+03
1E+04
1E+05
1E+06
I=Imax vs Induct.(see fi
g
.10)
I=1.5A
0
25
50
75
100
125
150
0123
Dia
g
on blankin
g
Diag off blanking
1.00E-06
1.00E-05
1.00E-04
1.00E-03
0 5 10 15 20 25 30 35
Figure 17 - I
cc (mA)
Vs V
cc
(V)
P1-P3P4-P6P7-P9P10-P12P13-P13

IPS511S

Mfr. #:
Buy IPS511S
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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