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NTP5411NG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 2
1 Publication Order Number:
NTB5411N/D
NTB5411N, NTP5411N
Power MOSFET
80 Amps, 60 Volts
N-Channel D
2
PAK, TO-220
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Gate−to−Source Voltage − Nonrepetitive
(T
P
< 10 ms)
V
GS
$30 V
Continuous Drain
Current R
q
JC
(Note 1)
Steady
State
T
C
= 25°C
I
D
80
A
T
C
= 100°C 61
Power Dissipation
R
q
JC
(Note 1)
Steady
State
T
C
= 25°C P
D
166 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
185 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
75 A
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V
dc
, I
L(pk)
= 75 A,
L = 0.1 mH, R
G
= 25 W)
E
AS
280 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
R
q
JC
0.9
°C/W
R
q
JA
43
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
(Note 1)
60 V
10 mW @ 10 V
80 A
N−Channel
D
S
G
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
NTP
5411NG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
NTB
5411NG
AYWW
NTB5411N, NTP5411N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V
(BR)DSS
/T
J
54.2 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C 10 mA
T
J
= 150°C 100
Gate−Body Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 mA
2.0 3.2 4.0 V
Negative Threshold Temperature Coefficient V
GS(th)
/T
J
6.6 mV/°C
Drain−to−Source On Voltage V
DS(on)
V
GS
= 10 V, I
D
= 80 A 0.71 0.92
V
V
GS
= 10 V, I
D
= 40 A, 150°C 0.65
Static Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 40 A 8.4 10
mW
Forward Transconductance g
FS
V
GS
= 15 V, I
D
= 40 A 70 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
3365 4500
pF
Output Capacitance C
oss
615
Transfer Capacitance C
rss
230
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 80 A
92 130
nC
Threshold Gate Charge Q
G(TH)
4.1
Gate−to−Source Charge Q
GS
19
Gate−to−Drain Charge Q
GD
43
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 80 A, R
G
= 9.1 W
22
ns
Rise Time t
r
122
Turn−Off Delay Time t
d(off)
116
Fall Time t
f
113
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
S
= 37.5 A
T
J
= 25°C 0.91 1.1
V
dc
T
J
= 150°C 0.8
Reverse Recovery Time t
rr
I
S
= 37.5 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
62
ns
Charge Time t
a
43
Discharge Time t
b
19
Reverse Recovery Stored Charge Q
RR
0.15
mC
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTB5411N, NTP5411N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
100
120
140
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
V
GS
= 4.5 V
5.5 V
6 V
6.5 V
10 V
7 V
T
J
= 25°C
0
20
40
60
80
100
120
140
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
DS
w 10 V
8
9
10
11
12
13
14
15
5678910
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D
= 40 A
T
J
= 25°C
5
6
7
8
9
10
11
12
10 30 50 70 90 110 130 150
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 25°C
V
GS
= 10 V
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−50 −25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
I
D
= 40 A
V
GS
= 10 V
10
100
1000
5 1015202530354045505560
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
2.2
2.4
P1-P3P4-P6P7-P7

NTP5411NG

Mfr. #:
Buy NTP5411NG
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 80A TO-220AB
Lifecycle:
New from this manufacturer.
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