NTB5411N, NTP5411N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
0
1000
2000
3000
4000
5000
6000
7000
0 102030405060
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
V
GS
= 0 V
C
rss
C
oss
C
iss
T
J
= 25°C
1
10
100
1000
1 10 100
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
DS
= 48 V
I
D
= 80 A
T
J
= 25°C
Q
T
Q
2
Q
1
t, TIME (ns)
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t
r
t
f
t
d(off)
t
d(on)
0
10
20
30
40
50
60
70
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
Figure 10. Diode Forward Voltage vs. Current
V
GS
= 0 V
T
J
= 25°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
50
100
150
200
250
300
25 50 75 100 125 150 175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
AVALANCHE ENERGY (mJ)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
I
D
= 75 A
V
DD
= 48 V
I
D
= 80 A
V
GS
= 10 V
0.1
10
100
1000
0.1 10 100
10 ms
100 ms
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
1
1
0 V ≤ V
GS
≤ 10 V
Single Pulse
T
C
= 25°C
