MTA9ASF1G72PKIZ-2G6B1 Datasheet MTA9ASF1G72PKIZ-2G6B1 | P19-P21

Specifications

Table 13: DDR4 I

Specifications and Conditions – 8GB (Die Revision B)

Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-

nent data sheet

Parameter Symbol 2666 Units

One bank ACTIVATE-PRECHARGE current I

DD0

459 mA

One bank ACTIVATE-PRECHARGE, word line boost, I

current I

PP0

27 mA

One bank ACTIVATE-READ-PRECHARGE current I

DD1

567 mA

Precharge standby current I

DD2N

315 mA

Precharge standby ODT current I

DD2NT

450 mA

Precharge power-down current I

DD2P

225 mA

Precharge quiet standby current I

DD2Q

270 mA

Active standby current I

DD3N

414 mA

Active standby I

current I

PP3N

27 mA

Active power-down current I

DD3P

351 mA

Burst read current I

DD4R

1314 mA

Burst write current I

DD4W

1188 mA

Burst refresh current (1 x REF) I

DD5R

504 mA

Burst refresh I

current (1 x REF) I

PP5R

45 mA

Self refresh current: Normal temperature range (0°C to +85°C) I

DD6N

270 mA

Self refresh current: Extended temperature range (0°C to +95°C) I

DD6E

315 mA

Self refresh current: Reduced temperature range (0°C to +45°C) I

DD6R

180 mA

Auto self refresh current (25°C) I

DD6A

77.4 mA

Auto self refresh current (45°C) I

DD6A

180 mA

Auto self refresh current (75°C) I

DD6A

270 mA

Auto self refresh I

current I

PP6X

45 mA

Bank interleave read current I

DD7

1620 mA

Bank interleave read I

current I

PP7

135 mA

Maximum power-down current I

DD8

225 mA

8GB (x72, ECC, SR) 288-Pin DDR4 MiniRDIMM

Specifications

CCMTD-341111752-10427

asf9c1gx72pkiz.pdf - Rev. D 1/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 14: DDR4 I

Specifications and Conditions – 8GB (Die Revision E)

Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-

nent data sheet

Parameter Symbol 3200 Units

One bank ACTIVATE-PRECHARGE current I

DD0

513 mA

One bank ACTIVATE-PRECHARGE, word line boost, I

current I

PP0

27 mA

One bank ACTIVATE-READ-PRECHARGE current I

DD1

621 mA

Precharge standby current I

DD2N

333 mA

Precharge standby ODT current I

DD2NT

540 mA

Precharge power-down current I

DD2P

225 mA

Precharge quiet standby current I

DD2Q

270 mA

Active standby current I

DD3N

504 mA

Active standby I

current I

PP3N

27 mA

Active power-down current I

DD3P

387 mA

Burst read current I

DD4R

1512 mA

Burst write current I

DD4W

1395 mA

Burst refresh current (1 x REF) I

DD5R

594 mA

Burst refresh I

current (1 x REF) I

PP5R

45 mA

Self refresh current: Normal temperature range (0°C to +85°C) I

DD6N

279 mA

Self refresh current: Extended temperature range (0°C to +95°C) I

DD6E

324 mA

Self refresh current: Reduced temperature range (0°C to +45°C) I

DD6R

189 mA

Auto self refresh current (25°C) I

DD6A

77.4 mA

Auto self refresh current (45°C) I

DD6A

189 mA

Auto self refresh current (75°C) I

DD6A

279 mA

Auto self refresh I

current I

PP6X

45 mA

Bank interleave read current I

DD7

1710 mA

Bank interleave read I

current I

PP7

135 mA

Maximum power-down current I

DD8

225 mA

8GB (x72, ECC, SR) 288-Pin DDR4 MiniRDIMM

Specifications

CCMTD-341111752-10427

asf9c1gx72pkiz.pdf - Rev. D 1/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Registering Clock Driver Specifications

Table 15: Registering Clock Driver Electrical Characteristics

DDR4 RCD01 devices or equivalent

Parameter Symbol Pins Min Nom Max Units

DC supply voltage V

– 1.14 1.2 1.26 V

DC reference voltage V

REF

REFCA

0.49 × V

0.5 × V

0.51 × V

DC termination

voltage

– V

REF

- 40mV V

REF

+ 40mV V

High-level input

voltage

IH. CMOS

DRST_n 0.65 × V

– V

Low-level input

voltage

IL. CMOS

0 – 0.35 × V

DRST_n pulse width

IN-

IT_Pow-

er_stable

– 1.0 – – µs

AC high-level output

voltage

OH(AC)

All outputs except

ALERT_n

+ (0.15 × V

) – – V

AC low-level output

voltage

OL(AC)

– – V

+ (0.15 × V

) V

AC differential out-

put high measure-

ment level (for out-

put slew rate)

OHdiff(AC)

Yn_t - Yn_c, BCK_t -

BCK_c

– 0.3 × V

– mV

AC differential out-

put low measure-

ment level (for out-

put slew rate)

OLdiff(AC)

– –0.3 × V

– mV

Note:

1. Timing and switching specifications for the register listed are critical for proper opera-

tion of DDR4 SDRAM RDIMMs. These are meant to be a subset of the parameters for the

specific device used on the module. See the JEDEC RCD01 specification for complete op-

erating electrical characteristics. Registering clock driver parametric values are specified

for device default control word settings, unless otherwise stated. The RC0A control

word setting does not affect parametric values.

8GB (x72, ECC, SR) 288-Pin DDR4 MiniRDIMM

Registering Clock Driver Specifications

CCMTD-341111752-10427

asf9c1gx72pkiz.pdf - Rev. D 1/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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MTA9ASF1G72PKIZ-2G6B1

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MODULE DDR4 8GB MINIRDIMM

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