ZXTP19060CZTA

Issue 1- February 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTP19060CZ
60V PNP medium transistor in SOT89
Summary
BV
CEO
> -60V
BV
ECO
> -7V
I
C(cont)
= 4.5A
V
CE(sat)
< -80mV @ -1A
R
CE(sat)
= 50mV
P
D
= 2.4W
Complementary part number ZXTN19060CZ
Description
Packaged in the SOT89 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
High gain
Low saturation voltage
High peak current
7V reverse blocking voltage
Applications
High side driver
Motor drive
Load disconnect switch
Ordering information
Device marking
1M2
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTP19060CZTA 7 12 1000
C
E
B
C
E
Pinout - top view
C
B
ZXTP19060CZ
Issue 1- February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<10 seconds.
(e) Junction to case (collector tab). Typical
Parameter Symbol Limit Unit
Collector-Base voltage V
CBO
-60 V
Collector-Emitter voltage V
CEO
-60 V
Emitter-Collector voltage (reverse blocking) V
ECX
-7 V
Emitter-Base voltage V
EBO
-7 V
Continuous Collector current
(c)
I
C
-4.5 A
Base current I
B
-1 A
Peak pulse current I
CM
-7 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.1
8.8
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.8
14.4
W
mW/°C
Power dissipation at T
A
=25°C
(c)
Linear derating factor
P
D
2.4
19.2
W
mW/°C
Power dissipation at T
A
=25°C
(d)
Linear derating factor
P
D
4.46
35.7
W
mW/°C
Power dissipation at T
C
=25°C
(e)
Linear derating factor
P
D
26.7
213
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150
°C
Parameter Symbol Limit Unit
Junction to ambient
(a)
R
UJA
117 °C/W
Junction to ambient
(b)
R
UJA
68 °C/W
Junction to ambient
(c)
R
UJA
51 °C/W
Junction to ambient
(d)
R
UJA
28 °C/W
Junction to case
(e)
R
UJC
4.69 °C/W
ZXTP19060CZ
Issue 1- February 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics

ZXTP19060CZTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 60V 4.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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