ZXTP19060CZTA

P1-P3 P4-P6 P7-P8

ZXTP19060CZ

Issue 1- February 2008 4 www.zetex.com

© Zetex Semiconductors plc 2008

Thermal characteristics

ZXTP19060CZ

Issue 1- February 2008 5 www.zetex.com

© Zetex Semiconductors plc 2008

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-Base breakdown

voltage

BV

CBO

-60 -110 V I

C

= -100µA

Collector-Emitter

breakdown voltage

BV

CEO

-60 -90 V

I

C

= -10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.

Emitter-Collector

breakdown voltage

(reverse blocking)

BV

ECX

-7 -8.4 V

I

E

= -100

µ

A, R

BC

< 1k

Ω

or

0.25V > V

BC

> -0.25V

Emitter-Collector

breakdown voltage

(reverse blocking)

BV

ECO

-7 -8.8 V I

E

= -100µA

Emitter-Base breakdown

voltage

BV

EBO

-7 -8.4 V I

E

= -100µA

Collector-Base cut-off

current

I

CBO

<1 -50

-0.5

nA

µA

V

CB

= -60V

V

CB

= -60V, T

amb

=100°C

Emitter cut-off current I

EBO

<1 -50 nA

V

EB

= -5.6V

Collector-Emitter

saturation voltage

V

CE(sat)

-62

-150

-500

-105

-145

-240

-80

-205

-750

-165

-200

-410

mV

mV

mV

mV

mV

mV

I

C

= -1A, I

B

= -100mA

(*)

I

C

= -1A, I

B

= -20mA

(*)

I

C

= -2A, I

B

= -40mA

(*)

I

C

= -2A, I

B

= -200mA

(*)

I

C

= -3A, I

B

= -300mA

(*)

I

C

= -4.5A, I

B

= -450mA

(*)

Base-Emitter saturation

voltage

V

BE(sat)

-965 -1050 mV

I

C

= -4.5A, I

B

= -450mA

(*)

Base-Emitter turn-on

voltage

V

BE(on)

-875 -1000 mV

I

C

= -4.5A, V

CE

= -2V

(*)

Static forward current

transfer ratio

h

FE

200

160

25

330

260

45

500

I

C

= -100mA, V

CE

= -2V

(*)

I

C

= -1A, V

CE

= -2V

(*)

I

C

= -4.5A, V

CE

= -2V

(*)

Transition frequency f

T

180 MHz I

C

= -50mA, V

CE

= -10V

f

= 50MHz

Input capacitance C

ibo

280 400 pF

V

EB

= -0.5V, f

= 1MHz

(*)

Output capacitance C

obo

29.5 40 pF

V

CB

= -10V, f

= 1MHz

(*)

Delay time t

d

24.3 ns

I

C

= -500mA, V

CC

= -10V,

I

B1

= -I

B2

= -50mA

Rise time t

r

13.2 ns

Storage time t

s

456 ns

Fall time t

f

68.2 ns

Issue 1- February 2008 6 www.zetex.com

© Zetex Semiconductors plc 2008

Typical characteristics

P1-P3 P4-P6 P7-P8

ZXTP19060CZTA

Mfr. #:

Buy ZXTP19060CZTA

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP 60V 4.5A

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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ZXTP19060CZTA