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IPB120P04P4L03ATMA1

P1-P3P4-P6P7-P9
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=-10V
-120 A
T
C
=100°C,
V
GS
=-10V
2)
-114
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
-480
Avalanche energy, single pulse
E
AS
I
D
=-60A
78 mJ
Avalanche current, single pulse
I
AS
-
-120 A
Gate source voltage
V
GS
-
±16
3)
V
Power dissipation
P
tot
T
C
=25 °C
136 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
-40 V
R
DS(on)
(SMD Version) 3.1
mW
I
D
-120 A
Product Summary
Type Package Marking
IPB120P04P4L-03 PG-TO263-3-2 4PP04L03
IPI120P04P4L-03 PG-TO262-3-1 4PP04L03
IPP120P04P4L-03 PG-TO220-3-1 4PP04L03
PG
-
TO220
-
3
-
1
PG
-
TO262
-
3
-
1
PG
-
TO263
-
3
-
2
Rev. 1.1
page 1 2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 1.1 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
- - - 62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
4)
- - 40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= -1mA
-40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=-340µA
-1.2 -1.7 -2.2
Zero gate voltage drain current
I
DSS
V
DS
=-32V, V
GS
=0V,
T
j
=25°C
- -0.05 -1 µA
V
DS
=-32V, V
GS
=0V,
T
j
=125°C
2)
- -20 -200
Gate-source leakage current
I
GSS
V
GS
=-16V, V
DS
=0V
- - -100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-4.5V, I
D
=-100A
- 4.0 5.2
mW
V
GS
=-4.5V,
I
D
=-100A,
SMD version
- 3.7 4.9
V
GS
=-10V, I
D
=-100A
- 2.9 3.4
V
GS
=-10V, I
D
=-100A,
SMD version
- 2.6 3.1
Values
Rev. 1.1
page 2 2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance
C
iss
- 11380 15000 pF
Output capacitance
C
oss
- 3410 5000
Reverse transfer capacitance
C
rss
- 135 270
Turn-on delay time
t
d(on)
- 21 - ns
Rise time
t
r
- 16 -
Turn-off delay time
t
d(off)
- 85 -
Fall time
t
f
- 57 -
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
- 40 52 nC
Gate to drain charge
Q
gd
- 32 64
Gate charge total
Q
g
- 180 234
Gate plateau voltage
V
plateau
- 3.5 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - -120 A
Diode pulse current
2)
I
S,pulse
- - -480
Diode forward voltage
V
SD
V
GS
=0V, I
F
=-100A,
T
j
=25°C
- -1 -1.3 V
Reverse recovery time
2)
t
rr
- 54 ns
Reverse recovery charge
2)
Q
rr
- 60 nC
2)
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 1.1K/W the chip is able to carry -171A at 25°C.
3)
V
GS
=+5V/-16V according AEC; V
GS
=+16V for max 168h at T
J
=175°C
T
C
=25°C
Values
V
GS
=0V, V
DS
=-25V,
f=1MHz
V
DD
=-20V,
V
GS
=-10V, I
D
=-120A,
R
G
=3.5W
V
DD
=-32V,
I
D
=-120A,
V
GS
=0 to -10V
V
R
=-20V, I
F
=-50A,
di
F
/dt=-100A/µs
Rev. 1.1
page 3 2015-05-27
P1-P3P4-P6P7-P9

IPB120P04P4L03ATMA1

Mfr. #:
Buy IPB120P04P4L03ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
Lifecycle:
New from this manufacturer.
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