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IPB120P04P4L03ATMA1

P1-P3P4-P6P7-P9
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≤ -6V I
D
= f(T
C
); V
GS
≤ -6V; SMD
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0; SMD Z
thJC
= f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
-I
D
[A]
-V
DS
[V]
single pulse
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Z
thJC
[K/W]
t
p
[s]
0
20
40
60
80
100
120
140
160
0 50 100 150 200
P
tot
[W]
T
C
[°C]
0
20
40
60
80
100
120
140
0 50 100 150 200
-I
D
[A]
T
C
[°C]
Rev. 1.1
page 4 2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C; SMD R
DS(on)
= (I
D
); T
j
= 25 °C; SMD
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= -6V R
DS(on)
= f(T
j
); I
D
= -100 A; V
GS
= -10 V; SMD
parameter: T
j
1.5
2.5
3.5
4.5
-60 -20 20 60 100 140 180
R
DS(on)
[mW]
T
j
[°C]
-55 °C
25 °C
175 °C
0
80
160
240
320
400
480
560
640
2 3 4 5
-I
D
[A]
-V
GS
[V]
-3 V
-3.5 V
-4 V
-4.5 V
-5 V
-10 V
0
80
160
240
320
400
480
560
640
0 1 2 3 4 5 6
-I
D
[A]
-V
DS
[V]
-2.8 V -3 V -3.5 V
-4 V
-4.5 V
-5 V
2
4
6
8
10
12
14
16
18
20
0 40 80 120
R
DS(on)
[mW]
-I
D
[A]
-10V
Rev. 1.1
page 5 2015-05-27
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristicis 12 Drain-source breakdown voltage
IF = f(V
SD
) V
BR(DSS)
= f(T
j
); I
D
= -1 mA
parameter: T
j
25 °C
175 °C
10
0
10
1
10
2
10
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-I
F
[A]
-V
SD
[V]
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
10
5
0 5 10 15 20 25 30
C [pF]
-V
DS
[V]
-340µA
-3400µA
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
-V
GS(th)
[V]
T
j
[°C]
35
36
37
38
39
40
41
42
43
44
45
-60 -20 20 60 100 140 180
-V
BR(DSS)
[V]
T
j
[°C]
Rev. 1.1
page 6 2015-05-27
P1-P3P4-P6P7-P9

IPB120P04P4L03ATMA1

Mfr. #:
Buy IPB120P04P4L03ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
Lifecycle:
New from this manufacturer.
Delivery:
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