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MMRF1312HR5

P1-P3P4-P6P7-P9P10-P12P13-P15
MMRF1312H MMRF1312HS MMRF1312GS
1
RF Device Data
Freescale Semiconductor , Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for pulse applications operating at
frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse
applications with large duty cycles and long pulses and are ideal for use in high
power military and commercial L -- Band radar applications such as IFF and
DME/TACAN.
Typical Short Pulse Performance:
In 900–1215 MHz reference circuit,
V
DD
=52Vdc,I
DQ(A+B)
= 100 mA
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
D
(%)
900
Pulse
(128 sec, 10% Duty Cycle)
1615 Peak 15.2 54.0
960 1560 Peak 17.3 55.7
1030 1500 Peak 17.8 53.8
1090 1530 Peak 18.0 54.5
1215 1200 Peak 19.2 58.5
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
1030
(1)
Pulse
(128 sec, 10%
Duty Cycle)
> 20:1 at all
Phase Angles
20.2 Peak
(3 dB
Overdrive)
52 No Device
Degradation
1. Measured in 1030 MHz narrowband reference circuit.
Features
Internally input and output matched for broadband operation and ease of use
Device can be used in a single--ended, push--pull or quadrature configuration
Qualified up to a maximum of 52 V
DD
operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative voltage range for improved
Class C operation and gate voltage pulsing
Characterized with series equivalent large--signal impedance parameters
Typical Applications
Air traffic control systems (ATC), including ground--based secondary radars
such as IFF interrogators or transponders
Distance measuring equipment (DME)
Tactical air navigation (TACAN)
Document Number: MMRF1312H
Rev. 0, 3/2016
Freescale Semiconductor
Technical Data
900–1215 MHz, 1000 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
MMRF1312H
MMRF1312HS
MMRF1312GS
NI--1230GS--4L
MMRF1312GS
NI--1230S--4S
MMRF1312HS
NI--1230H--4S
MMRF1312H
(Top View)
Drain A
31
Figure 1. Pin Connections
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
Freescale Semiconductor, Inc., 2016.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor , Inc.
MMRF1312H MMRF1312HS MMRF1312GS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +112 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Storage Temperature Range T
stg
–65to+150 C
Case Operating Temperature Range T
C
–40 to 150 C
Operating Junction Temperature Range
(1)
T
J
–40 to 225 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
1053
5.26
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Impedance, Junction to Case
Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, I
DQ
= 100 mA, 1030 MHz
Z
JC
0.017
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(3)
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
Drain--Source Breakdown Voltage
(V
GS
=0Vdc,I
D
=10A)
V
(BR)DSS
112 — — Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=50Vdc,V
GS
=0Vdc)
I
DSS
— — 1 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=112Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
On Characteristics
Gate Threshold Voltage
(3)
(V
DS
=10Vdc,I
D
= 520 Adc)
V
GS(th)
1.3 1.8 2.3 Vdc
Gate Quiescent Voltage
(4)
(V
DD
=50Vdc,I
D
= 100 mAdc, Measured in Functional Test)
V
GS(Q)
1.5 2.0 2.5 Vdc
Drain--Source On--Voltage
(3)
(V
GS
=10Vdc,I
D
=2.6Adc)
V
DS(on)
0.05 0.17 0.35 Vdc
Dynamic Characteristics
(3)
Reverse Transfer Capacitance
(V
DS
=50Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 2.5 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. Refer t o AN1955, Thermal M easurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for A N1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
MMRF1312H MMRF1312HS MMRF1312GS
3
RF Device Data
Freescale Semiconductor , Inc.
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Narrowband Production Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ(A+B)
= 100 mA, P
out
= 1000 W
Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
ps
18.5 19.6 22.0 dB
Drain Efficiency
D
55.5 59.7 — %
Input Return Loss IRL — –15 –9 dB
Table 5. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) I
DQ
(A+B)
= 100 mA
Frequency
(MHz)
Signal Type VSWR
P
in
(W) Test Voltage, V
DD
Result
1030 Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at all
Phase Angles
20.2 Peak
(3 dB Overdrive)
52 No Device
Degradation
Table 6. Ordering Information
Device Tape and Reel Information Package
MMRF1312HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230H--4S, Eared
MMRF1312HSR5 NI--1230S--4S, Earless
MMRF1312GSR5 NI--1230GS--4L, Gull Wing
1. Measurement made with device in push--pull configuration.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
P1-P3P4-P6P7-P9P10-P12P13-P15

MMRF1312HR5

Mfr. #:
Buy MMRF1312HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Lifecycle:
New from this manufacturer.
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