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MMRF1312HR5

P1-P3P4-P6P7-P9P10-P12P13-P15
4
RF Device Data
Freescale Semiconductor , Inc.
MMRF1312H MMRF1312HS MMRF1312GS
TYPICAL CHARACTERISTICS
1
02010
V
DS
, DRAIN--SOURCE VOL TAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
C
rss
Measured with 30 mV(rms)ac @ 1 MHz
V
GS
=0Vdc
Note: Each side of device measured separately.
100
30 40 50
I
DQ(A+B)
= 100 mA
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
NORMALIZED V
GS(Q)
T
C
, CASE TEMPERATURE (C)
1.08
1.04
1.02
1
0.98
0.96
100–50 0–25 25 50 75
500 mA
1500 mA
V
DD
=50Vdc
100 –2.36
I
DQ
(mA)
Slope (mV/C)
500 –2.26
1500 –1.84
0.92
0.94
1.06
250
10
9
90
T
J
, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature — Pulse
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
10
8
I
D
= 26.74 Amps
34.04 Amps
39.03 Amps
V
DD
=50Vdc
Pulse Width = 128 sec
10% Duty Cycle
MMRF1312H MMRF1312HS MMRF1312GS
5
RF Device Data
Freescale Semiconductor , Inc.
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4.05.0 (10.2 cm 12.7 cm)
C1
C2
B1
B2
C3
C4
C5
C7
C8
C6
R2
R1
C9
C10
C11
C12
C15
C16
C13
C14
L2
L1
C19
C20
C27
C29
C28 C30
C17*
C18*
C21*
C22*
C23*
C24*
C25*
C26*
* C17, C18, C21, C22, C23, C24, C25 and C26 are mounted vertically.
CUT OUT AREA
COAX3
COAX4
COAX1
COAX2
Figure 5. MMRF1312H(HS) Narrowband Test Circuit C omponent Layout — 1030 MHz
MMRF1312H
Rev. 0
D82114
Table 7. MMRF1312H(HS) Narrowband Test Circuit Component Designations and Values — 1030 MHz
Part Description Part Number Manufacturer
B1, B2 Short RF Bead 2743019447 Fair-Rite
C1, C2
22 F, 35 V Tantalum Capacitors
T491X226K035AT Kemet
C3, C4
2.2 F Chip Capacitors
C1825C225J5RACTU Kemet
C5, C6
0.1 F Chip Capacitors
CDR33BX104AKWS AVX
C7, C8 36 pF Chip Capacitors ATC100B360JT500XT ATC
C9 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC
C10, C11 30 pF Chip Capacitors ATC100B300JT500XT ATC
C12 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C13, C14 36 pF Chip Capacitors ATC100B360JT500XT ATC
C15, C16 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C17 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC
C18 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC
C19, C20
0.01 F Chip Capacitors
C1825C103K1GACTU Kemet
C21, C22, C23, C24, C25, C26 43 pF Chip Capacitors ATC100B430JT500XT ATC
C27, C28, C29, C30
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH Multicomp
Coax1, Coax2, Coax3, Coax4
35 Flex Cable 1.98
HSF-141C-35 Hongsen Cable
L1, L2
12 H, 3 Turn Inductors
GA3094-ALC Coilcraft
R1, R2
1.1 k, 1/4 W Chip Resistors
CRCW12061K10FKEA Vishay
PCB Arlon, AD255A, 0.03,
r
=2.55 D82114 MTL
6
RF Device Data
Freescale Semiconductor , Inc.
MMRF1312H MMRF1312HS MMRF1312GS
TYPICAL CHARACTERISTICS — 1030 MHz
NARROWBAND PRODUCTION TEST FIXTURE
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
22
30 100
21
20
80
60
50
40
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
D
14
1000
G
ps
18
19
16
17
15
70
30
20
10
V
DD
=50Vdc,I
DQ(A+B)
= 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
0
P3dB
(W)
60
29
56
54
P
in
, INPUT POWER (dBm) PEAK
Figure 7. Output Power versus Input Power
P
out
, OUTPUT POWER PEAK
58
50
48
52
31 33 35 37 39 41 43 45
46
62
1030
1002 1115
f
(MHz)
P1dB
(W)
V
DD
=50Vdc,I
DQ(A+B)
= 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
14
22
30
0
80
100
60
50
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
21
1000
300 mA
40
20
18
V
DD
= 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
19
16
17
15
70
30
20
10
100 mA
500 mA
14
22
30 100
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 9. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
21
1000
V
DD
=30V
20
18
I
DQ(A + B)
= 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
19
16
17
15
10
12
13
11
35 V35 V
40 V
45 V
50 V
P
in
, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
P
out
, OUTPUT POWER (WATTS) PEA
K
29
T
C
= –40_C
V
DD
=50Vdc,I
DQ(A=B)
= 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
25_C
0
200
400
600
800
1000
1200
1400
31 33 35 37 39 41 43 45
25_C
85_C
24
30
0
80
100
60
50
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
D
,
DRAIN EFFICIENCY
(
%
)
D
1000
85_C
T
C
= –40_C
40
22
20
V
DD
=50Vdc,I
DQ(A+B)
= 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
18
70
30
20
10
25_C
G
ps
16
14
12
8
10
85_C
25_C
I
DQ(A+B)
= 700 mA
T
C
= –40_C
P1-P3P4-P6P7-P9P10-P12P13-P15

MMRF1312HR5

Mfr. #:
Buy MMRF1312HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Lifecycle:
New from this manufacturer.
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