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BAT74S
Dual Schottky barrier diode
22 November 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
Planar Schottky barrier dual diode with an integrated guard ring for stress protection.
Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
F
forward current - - 200 mA
V
R
reverse voltage - - 30 V
Per diode
V
F
forward voltage I
F
= 100 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 800 mV
I
R
reverse current V
R
= 25 V; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 2 µA
NXP Semiconductors
BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 2 / 10
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode (diode 1)
2 n.c. not connected
3 K2 cathode (diode 2)
4 A2 anode (diode 2)
5 n.c. not connected
6 K1 cathode (diode 1)
1 32
456
TSSOP6 (SOT363)
aaa-005709
K2
A2
A1
K1
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BAT74S TSSOP6 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
[1]
BAT74S 74%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 - 300 mA
I
FSM
non-repetitive peak forward
current
t
p
< 10 ms; T
j(init)
= 25 °C - 600 mA
P
tot
total power dissipation T
amb
≤ 25 °C - 240 mW
T
j
junction temperature - 125 °C

BAT74S,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHOTTKY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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