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BAT74S,115

P1-P3P4-P6P7-P9P10-P11
NXP Semiconductors
BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 3 / 10
Symbol Parameter Conditions Min Max Unit
T
amb
ambient temperature -55 125 °C
T
stg
storage temperature -65 150 °C
Per device
series connection - 60 VV
R
reverse voltage
- 30 V
I
F
forward current [1] - 110 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 - 200 mA
[1] If both diodes are in forward operation at the same moment, total device current is maximum 110 mA.
If one diode is in reverse and the other in forward operation at the same moment, total device current is
maximum 200 mA.
mbl889
0
100
200
300
P
tot
(mW)
150750
T
amb
(°C)
Fig. 1. Power derating curve
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 416 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors
BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 4 / 10
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
F
= 0.1 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 240 mV
I
F
= 1 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 320 mV
I
F
= 10 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 400 mV
I
F
= 30 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 500 mV
V
F
forward voltage
I
F
= 100 mA; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 800 mV
I
R
reverse current V
R
= 25 V; pulsed; t
p
= 300 µs;
δ = 0.02 ; T
amb
= 25 °C
- - 2 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C - - 10 pF
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
amb
= 25 °C
- - 5 ns
006aac829
V
F
(V)
0.0 1.20.80.4
1
10
10
2
10
3
I
F
(mA)
10
-1
(1)
(1)
(2)
(2) (3)
(3)
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 2. Forward current as a function of forward
voltage; typical values
aaa-004515
V
R
(V)
0 302010
1
10
10
2
10
3
I
R
(µA)
10
-1
(1)
(2)
(3)
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 3. Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors
BAT74S
Dual Schottky barrier diode
BAT74S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 5 / 10
006aac891
V
R
(V)
0 302010
4
6
2
8
10
C
d
(pF)
0
T
amb
= 25 °C; f = 1 MHz
Fig. 4. Diode capacitance as a function of reverse voltage; typical values
8. Test information
(1) I
R
= 1 mA
Fig. 5. Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P11

BAT74S,115

Mfr. #:
Buy BAT74S,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers DIODE SCHOTTKY
Lifecycle:
New from this manufacturer.
Delivery:
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