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NCV33072DR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 22
1 Publication Order Number:
MC34071/D
MC34071,2,4,A
MC33071,2,4,A,
NCV33072,4,A
Single Supply 3.0 V to 44 V
Operational Amplifiers
Quality bipolar fabrication with innovative design concepts are
employed for the MC33071/72/74, MC34071/72/74, NCV33072/74A
series of monolithic operational amplifiers. This series of operational
amplifiers offer 4.5 MHz of gain bandwidth product, 13 V/ms slew rate
and fast settling time without the use of JFET device technology.
Although this series can be operated from split supplies, it is
particularly suited for single supply operation, since the common
mode input voltage range includes ground potential (V
EE
). With a
Darlington input stage, this series exhibits high input resistance, low
input offset voltage and high gain. The all NPN output stage,
characterized by no deadband crossover distortion and large output
voltage swing, provides high capacitance drive capability, excellent
phase and gain margins, low open loop high frequency output
impedance and symmetrical source/sink AC frequency response.
The MC33071/72/74, MC34071/72/74, NCV33072/74,A series of
devices are available in standard or prime performance (A Suffix)
grades and are specified over the commercial, industrial/vehicular or
military temperature ranges. The complete series of single, dual and
quad operational amplifiers are available in plastic DIP, SOIC, QFN
and TSSOP surface mount packages.
Features
• Wide Bandwidth: 4.5 MHz
• High Slew Rate: 13 V/ms
• Fast Settling Time: 1.1 ms to 0.1%
• Wide Single Supply Operation: 3.0 V to 44 V
• Wide Input Common Mode Voltage Range: Includes Ground (V
EE)
• Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)
• Large Output Voltage Swing: −14.7 V to +14 V (with ±15 V
Supplies)
• Large Capacitance Drive Capability: 0 pF to 10,000 pF
• Low Total Harmonic Distortion: 0.02%
• Excellent Phase Margin: 60°
• Excellent Gain Margin: 12 dB
• Output Short Circuit Protection
• ESD Diodes/Clamps Provide Input Protection for Dual and Quad
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
See detailed ordering and shipping information on page 18 o
f
this data sheet.
ORDERING INFORMATION
PDIP−8
P SUFFIX
CASE 626
1
8
SOIC−8
D SUFFIX
CASE 751
1
8
PDIP−14
P SUFFIX
CASE 646
1
14
SOIC−14
D SUFFIX
CASE 751A
1
14
TSSOP−14
DTB SUFFIX
CASE 948G
1
14
See general marking information in the device marking
section on page 21 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
WQFN10
MT SUFFIX
CASE 510AJ
MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A
http://onsemi.com
2
CASE 626/CASE 751
PIN CONNECTIONS
(Single, Top View)
(Dual, Top View)
Offset Null
V
EE
NC
V
CC
Output
Offset Null
Inputs
V
EE
Inputs 1
Inputs 2
Output 2
Output 1 V
CC
-
1
2
3
4
8
7
6
5
-
-
+
+
1
2
3
4
8
7
6
5
+
Inputs 1
Output 1
V
CC
Inputs 2
Output 2
Output 4
Inputs 4
V
EE
Inputs 3
Output 3
(Quad, Top View)
4
2
3
1
1
2
3
4
5
6
78
9
10
11
12
13
14
-
+
-
+
+
-
+
-
CASE 646/CASE 751A/CASE 948G CASE 510AJ
Output 1
NC
In  1
In + 1
In + 2
In  2
Output 2
NC
VCC
VEE/GND
(Top View)
1
2
3
4
5
6
7
8
9
10
Offset Null
(MC33071, MC34071 only)
Q1
Q2
Q3 Q4
Q5
Q6
Q7
Q17
Q18
D2
C2
D3
R6 R7
R8
R5
Q15 Q16
Q14
Q13
Q11
Q10
R2
C1
R1
Q9
Q8
Q12
D1
R3 R4
Inputs
V
CC
Output
Current
Limit
V
EE
/GND
Base
Current
Cancellation
-
+
Q19
Bias
Figure 1. Representative Schematic Diagram
(Each Amplifier)
MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A
http://onsemi.com
3
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (from V
EE
to V
CC
) V
S
+44 V
Input Differential Voltage Range V
IDR
(Note 1) V
Input Voltage Range V
IR
(Note 1) V
Output Short Circuit Duration (Note 2) t
SC
Indefinite Sec
Operating Junction Temperature T
J
+150 °C
Storage Temperature Range T
stg
−60 to +150 °C
ESD Capability, Dual and Quad (Note 3)
Human Body Model
Machine Model
ESD
HBM
ESD
MM
2000
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Either or both input voltages should not exceed the magnitude of V
CC
or V
EE
.
2. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded (see Figure 2).
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
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NCV33072DR2G

Mfr. #:
Buy NCV33072DR2G
Manufacturer:
ON Semiconductor
Description:
Operational Amplifiers - Op Amps SOIC-8 PB FREE
Lifecycle:
New from this manufacturer.
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