NXPSC20650
Silicon Carbide Diode
6 May 2016 Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high
frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
3. Applications
• Power factor correction
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 650 V
I
F(AV)
average forward
current
δ = 0.5 ; T
mb
≤ 76 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 20 A
T
j
junction temperature - - 175 °C
Static characteristics
I
F
= 20 A; T
j
= 25 °C; Fig. 5 - 1.5 1.7 VV
F
forward voltage
I
F
= 20 A; T
j
= 150 °C; Fig. 5 - 1.8 2.1 V
Dynamic characteristics
Q
r
recovered charge I
F
= 20 A; dI
F
/dt = 500 A/µs;
V
R
= 400 V; T
j
= 25 °C; Fig. 6
- 28 - nC
