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NXPSC20650Q

P1-P3P4-P6P7-P9P10-P10
WeEn Semiconductors
NXPSC20650
Silicon Carbide Diode
NXPSC20650 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 6 May 2016 4 / 10
25
50
75 100 125 150 175
0
40
80
120
160
T
mb
(°C)
I
F(peak)
(A)
aaa006-006
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
Fig. 3. Current derating as a function of mounting base temperature
WeEn Semiconductors
NXPSC20650
Silicon Carbide Diode
NXPSC20650 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 6 May 2016 5 / 10
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4 - - 1.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 60 - K/W
aae006-003
t
p
(s)
10
-6
1 10
10
-1
10
-2
10
-5
10
-3
10
-4
1
10
-1
10
Z
th(j-mb)
(K/W)
10
-2
t
p
t
p
T
P
t
T
δ =
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
WeEn Semiconductors
NXPSC20650
Silicon Carbide Diode
NXPSC20650 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 6 May 2016 6 / 10
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
F
= 20 A; T
j
= 25 °C; Fig. 5 - 1.5 1.7 VV
F
forward voltage
I
F
= 20 A; T
j
= 150 °C; Fig. 5 - 1.8 2.1 V
V
R
= 650 V; T
j
= 25 °C - - 500 µAI
R
reverse current
V
R
= 650 V; T
j
= 150 °C - - 1600 µA
Dynamic characteristics
Q
r
recovered charge I
F
= 20 A; dI
F
/dt = 500 A/µs;
V
R
= 400 V; T
j
= 25 °C; Fig. 6
- 28 - nC
f = 1 MHz; V
R
= 1 V; T
j
= 25 °C - 600 - pF
f = 1 MHz; V
R
= 300 V; T
j
= 25 °C - 64 - pF
C
d
diode capacitance
f = 1 MHz; V
R
= 600 V; T
j
= 25 °C - 50 - pF
0 1 2 3 4
0
10
20
30
40
V
F
(V)
I
F
(A)
(1)
(2)
(3)
(4)
aaa006-004
V
o
= 0.970 V; R
s
= 0.054 Ω
(1) T
j
= 25 °C; typical values
(2) T
j
= 100 °C; typical values
(3) T
j
= 150 °C; typical values
(4) T
j
= 175 °C; typical values
Fig. 5. Forward current as a function of forward voltage;
typical values
T
j
(°C)
0 175
150
50 100
aaa006-005
16
8
24
32
Q
r
(nC)
0
Fig. 6. Recovered charge as a function of junction
temperature
P1-P3P4-P6P7-P9P10-P10

NXPSC20650Q

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Buy NXPSC20650Q
Manufacturer:
WeEn Semiconductors
Description:
Schottky Diodes & Rectifiers NXPSC20650/TO-220AC/STANDARD M
Lifecycle:
New from this manufacturer.
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