SI7858BDP-T1-GE3 Datasheet SI7858BDP-T1-GE3 | P1-P3

Vishay Siliconix

Si7858BDP

New Product

Document Number: 66589

S10-1045-Rev. A, 03-May-10

www.vishay.com

1

N-Channel 12 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Low Output Voltage, High Current Synchronous

Rectifiers

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

a

Q

g

(Typ.)

12

0.0025 at V

GS

= 4.5 V 40

56 nC0.0030 at V

GS

= 2.5 V 40

0.0037 at V

GS

= 1.8 V 40

Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

®

SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

12

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

40

a

A

T

C

= 70 °C

40

a

T

A

= 25 °C

33

b, c

T

A

= 70 °C

26

b, c

Pulsed Drain Current

I

DM

70

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

40

a

T

A

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

20

Single Pulse Avalanche Energy

E

AS

20

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

48

W

T

C

= 70 °C

31

T

A

= 25 °C

5.0

b, c

T

A

= 70 °C

3.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

R

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R

thJC

2.1 2.6

www.vishay.com

2

Document Number: 66589

S10-1045-Rev. A, 03-May-10

Vishay Siliconix

Si7858BDP

New Product

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

12 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

12

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 3.2

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.4 1.0 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 12 V, V

GS

= 0 V

1

µA

V

DS

= 12 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 15 A

0.0020 0.0025

Ω

V

GS

= 2.5 V, I

D

= 12 A

0.0023 0.0030

V

GS

= 1.8 V, I

D

= 10 A

0.0029 0.0037

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 15 A

105 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 6 V, V

GS

= 0 V, f = 1 MHz

5760

pFOutput Capacitance

C

oss

1730

Reverse Transfer Capacitance

C

rss

1145

Total Gate Charge

Q

g

V

DS

= 6 V, V

GS

= 4.5 V, I

D

= 10 A

56 84

nC

V

DS

= 6 V, V

GS

= 2.5 V, I

D

= 10 A

33 50

Gate-Source Charge

Q

gs

5.9

Gate-Drain Charge

Q

gd

12.5

Gate Resistance

R

g

f = 1 MHz 0.2 0.65 1.3 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 6 V, R

L

= 0.6 Ω

I

D

≅ 10 A, V

GEN

= 4.5 V, R

g

= 1 Ω

25 50

ns

Rise Time

t

r

53 100

Turn-Off Delay Time

t

d(off)

115 200

Fall Time

t

f

30 60

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 6 V, R

L

= 0.6 Ω

I

D

≅ 10 A, V

GEN

= 8 V, R

g

= 1 Ω

16 32

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

56 100

Fall Time

t

f

10 20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

40

A

Pulse Diode Forward Current

a

I

SM

70

Body Diode Voltage

V

SD

I

S

= 5 A

0.62 1.1 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

40 80 ns

Body Diode Reverse Recovery Charge

Q

rr

33 64 nC

Reverse Recovery Fall Time

t

a

22

ns

Reverse Recovery Rise Time

t

b

18

Document Number: 66589

S10-1045-Rev. A, 03-May-10

www.vishay.com

3

Vishay Siliconix

Si7858BDP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

=5Vthru1.5V

V

GS

=1V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0.0018

0.0022

0.0026

0.0030

0.0034

0.0038

0 1428425670

V

GS

=1.8V

V

GS

=2.5V

V

GS

=4.5V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

0.0

1.6

3.2

4.8

6.4

8.0

0 20 40 60 80 100

I

D

=10A

V

DS

=8V

V

DS

=6V

V

DS

=4V

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0 0.3 0.6 0.9 1.2 1.5

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

1600

3200

4800

6400

8000

0.0 2.4 4.8 7.2 9.6 12.0

C

iss

C

oss

C

rss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.7

0.9

1.1

1.3

1.5

- 50 - 25 0 25 50 75 100 125 150

I

D

=15A

V

GS

=2.5V

V

GS

=4.5V

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

SI7858BDP-T1-GE3

SI7858BDP-T1-GE3

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