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SI7858BDP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 66589
S10-1045-Rev. A, 03-May-10
Vishay Siliconix
Si7858BDP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.003
0.006
0.009
0.012
0.015
012345
T
J
=25 °C
I
D
=15A
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
50
100
150
200
250
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
0.1
1ms
10 s
10 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
DC
BVDSS Limited
1s
100 ms
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
Document Number: 66589
S10-1045-Rev. A, 03-May-10
www.vishay.com
5
Vishay Siliconix
Si7858BDP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
23
46
69
92
115
0 255075100125150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Case
0
12
24
36
48
60
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 66589
S10-1045-Rev. A, 03-May-10
Vishay Siliconix
Si7858BDP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66589
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.01
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.02
Single Pulse
0.1
0.2
0.05
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7858BDP-T1-GE3

Mfr. #:
Buy SI7858BDP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 12V Vds 8V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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