Data Sheet SSM2212
Rev. C | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—SOIC PACKAGE
V
CB
= 15 V, I
O
= 10 µA, T
A
= 25°C, unless otherwise specified.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
DC AND AC CHARACTERISTICS
Current Gain
1
h
FE
I
C
= 1 mA 300 605
−40°C ≤ T
A
≤ +85°C 300
I
C
= 10 µA 200 550
−40°C ≤ T
A
≤ +85°C 200
Current Gain Match
2
Δh
FE
10 µA ≤ I
C
≤ 1 mA 0.5 5 %
Noise Voltage Density
3
e
N
I
C
= 1 mA, V
CB
= 0 V
f
O
= 10 Hz 1.6 2 nV/√Hz
f
O
= 100 Hz 0.9 1 nV/√Hz
f
O
= 1 kHz 0.85 1 nV/√Hz
f
O
= 10 kHz 0.85 1 nV/√Hz
Low Frequency Noise (0.1 Hz to 10 Hz) e
N
p-p I
C
= 1 mA 0.4 µV p-p
Offset Voltage V
OS
V
CB
= 0 V, I
C
= 1 mA 10 200 µV
A
Offset Voltage Change vs. V
CB
ΔV
OS
/ΔV
CB
0 V ≤ V
CB
≤ V
MAX
4
,1 µA ≤ I
C
≤ 1 mA
5
10 50 µV
Offset Voltage Change vs. I
C
ΔV
OS
/ΔI
C
1 µA ≤ I
C
≤ 1 mA
5
, V
CB
= 0 V 5 70 µV
Offset Voltage Drift ΔV
OS
/ΔT −40°C ≤ T
A
≤ +85°C 0.08 1 µV/°C
−40°C ≤ T
A
≤ +85°C, V
OS
trimmed to 0 V 0.03 0.3 µV/°C
CEO
Gain Bandwidth Product f
T
I
C
= 10 mA, V
CE
= 10 V 200 MHz
Collector-to-Base Leakage Current I
CBO
V
CB
= V
MAX
25 500 pA
−40°C ≤ T
A
≤ +85°C 3 nA
Collector-to-Collector Leakage Current I
CC
V
CC
= V
MAX
6, 7
35 500 pA
−40°C ≤ T
A
≤ +85°C 4 nA
Collector-to-Emitter Leakage Current I
CES
V
CE
= V
MAX
, V
BE
= 0 V
6, 7
35 500 pA
−40°C ≤ T
A
≤ +85°C 4 nA
Input Bias Current I
B
I
C
= 10 µA 50 nA
−40°C ≤ T
A
≤ +85°C 50 nA
Input Offset Current I
OS
I
C
= 10 µA 6.2 nA
−40°C ≤ T
A
≤ +85°C 13 nA
Input Offset Current Drift
OS
C
6
A
Collector Saturation Voltage V
CE (SAT)
I
C
= 1 mA, I
B
= 100 µA 0.05 0.2 V
Output Capacitance C
OB
V
CB
= 15 V, I
E
= 0 µA 23 pF
Bulk Resistance R
BE
10 µA ≤ I
C
≤ 10 mA
6
0.3 1.6 Ω
Collector-to-Collector Capacitance C
CC
V
CC
= 0 V 35 pF
1
Current gain is guaranteed with collector-to-base voltage (V
CB
) swept from 0 V to V
MAX
at the indicated collector currents.
2
Current gain match (Δh
FE
) is defined as follows: Δh
FE
= (100(ΔI
B
)(h
FE min
)/I
C
).
3
Noise voltage density is guaranteed, but not 100% tested.
4
This is the maximum change in V
OS
as V
CB
is swept from 0 V to 40 V.
5
Measured at I
C
= 10 µA and guaranteed by design over the specified range of I
C
.
6
Guaranteed by design.
7
I
CC
and I
CES
are verified by measurement of I
CBO
.
