IXTP110N055T

© 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 175° C55V
V
DGR
T
J
= 25° C to 175° C; R
GS
= 1 M 55 V
V
GSM
Transient ± 20 V
I
D25
T
C
= 25° C 110 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25° C, pulse width limited by T
JM
300 A
I
AR
T
C
= 25° C25A
E
AS
T
C
= 25° C 750 mJ
dv/dt I
S
I
DM
, di/dt 100 A/µs, V
DD
V
DSS
3 V/ns
T
J
175° C, R
G
= 5
P
D
T
C
= 25° C 230 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3 g
TO-263 2.5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA55V
V
GS(th)
V
DS
= V
GS
, I
D
= 100 µA 2.0 4.0 V
I
GSS
V
GS
= ± 20 V, V
DS
= 0 V ± 200 nA
I
DSS
V
DS
= V
DSS
2 µA
V
GS
= 0 V T
J
= 150° C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2 5.8 7.0 m
TrenchMV
TM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA110N055T
IXTP110N055T
V
DSS
=55 V
I
D25
=110 A
R
DS(on)
7.0 m
DS99625 (11/06)
TO-263 (IXTA)
TO-220 (IXTP)
G
S
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA110N055T
IXTP110N055T
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1 38 65 S
C
iss
3080 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 560 pF
C
rss
140 pF
t
d(on)
Resistive Switching Times 20 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 30 ns
t
d(off)
R
G
= 5 (External) 40 ns
t
f
24 ns
Q
g(on)
67 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 17.5 nC
Q
gd
15 nC
R
thJC
0.65°C/W
R
thCS
TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25° C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 110 A
I
SM
Pulse width limited by T
JM
300 A
V
SD
I
F
= 25 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/µs70ns
V
R
= 25 V, V
GS
= 0 V
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTA110N055T
IXTP110N055T
Fig. 1. Output Characteristics
@ 2C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 2C
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
5V
9V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
100
110
120
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 & TO-220

IXTP110N055T

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 55V 110A TO-220
Lifecycle:
New from this manufacturer.
Delivery:
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