© 2006 IXYS CORPORATION All rights reserved
IXTA110N055T
IXTP110N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
21
22
23
24
25
26
27
28
29
30
31
20 22 24 26 28 30 32 34 36 38 40
I
D
- Amperes
t
r
- Nanosecond
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 27.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
30
40
50
60
70
80
90
100
5 7 9 111315171921232527293133
R
G
- Ohms
t
r
- Nanoseconds
18.0
20.5
23.0
25.5
28.0
30.5
33.0
35.5
38.0
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 40A
I
D
= 20A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
23.0
23.5
24.0
24.5
25.0
25.5
26.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
35.0
37.5
40.0
42.5
45.0
47.5
50.0
t
d ( o f f )
- Nanosecond
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 27.5V
I
D
= 20A
I
D
= 40A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
23
24
25
26
27
20 22 24 26 28 30 32 34 36 38 40
I
D
- Amperes
t
f
- Nanoseconds
35.0
37.5
40.0
42.5
45.0
47.5
50.0
52.5
55.0
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 27.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
21
22
23
24
25
26
27
28
29
30
31
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 27.5V
I
D
= 40A
I
D
= 20A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
30
40
50
60
70
80
90
100
110
120
5 7 9 111315171921232527293133
R
G
- Ohms
t
f
- Nanoseconds
30
60
90
120
150
180
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 40A
I
D
= 20A
IXYS REF: T_110N055T (3V) 7-11-06.xls
