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VN750PS-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN750PS
-E
E
lectrica
l specifications
Doc ID 1
6782 Re
v 3
19
/27
2.9
SO-8 maximu
m demagnetization
energy (V
CC
= 13.5 V)
Figure 26.
SO-8 maximum turn-off
current versus induct
ance
C: T
jstart
= 125 °C
repetitiv
e pulse
A: T
jstart
= 150
°C sing
le puls
e
B: T
jstart
= 100 °C
repetiti
ve pulse
Dema
gnetiza
tion
Demagn
etization
Demagnetiz
ation
t
V
IN
, I
L
1
10
100
0.
1
1
10
100
L(
m
H
)
I
LMAX (A)
A
B
C
Note:
V
alues
are gene
rated wit
h R
L
=0
Ω
.In case of r
epetitive pulses,
T
jst
art
(at beg
inning o
f each dem
agnetizatio
n) of ever
y pulse
must not e
xceed the te
mperatur
e specified a
bove for c
urves A a
nd B.
Package
and PCB ther
mal data
VN750PS-
E
20/27
Doc ID 16782
Rev 3
3
Package and PCB therm
al dat
a
3.1 SO-8
thermal
dat
a
Figure 27.
PC board
Figure 28.
R
thj-amb
vs PCB copper area in open box free air condition
.
Note:
Layo
ut con
diti
on
of R
th
and Z
th
measure
ments (PC
B FR4 area
= 58 mm x 5
8 mm, PC
B thickness = 2 m
m, Cu
thickness=35
µ
m, Copper are
as: 0.14 cm
2
, 0.8 cm
2
, 2 cm
2
).
70
75
80
85
90
95
100
105
110
00
.
511
.
522
.
5
P
C
B
C
u h
ea
tsi
n
k a
rea
(c
m
^
2
)
RT
Hj
_
a
m
b
(
º
C
/
W
)
S
O-8
at 2 pins
conne
cte
d t
o T
A
B
VN750PS
-E
Package and P
CB thermal data
Doc ID 1
6782 Re
v 3
21
/27
Figure 29.
SO-8 thermal impedance junction ambient single pulse
Equation 1: pulse calculation formula
where
δ
= t
P
/T
Figure 30.
Thermal fitting model of a single channel
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
Ti
m
e
(
s
)
ZT
H
(
°
C
/
W)
0.5 cm
2
2 cm
2
Z
TH
δ
R
TH
δ
Z
THtp
1
δ
–
()
+
⋅
=
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
VN750PS-E
Mfr. #:
Buy VN750PS-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution High Side Driver 60mOhm 6A 36V
Lifecycle:
New from this manufacturer.
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