STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88565
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
4
DSCC FORM 2234
APR 97
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein .
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88565
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55C T
A
+125C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Min Max
Input offset voltage
V
IO
1 01, 03
0.4
mV
2, 3
0.6
M,D,P,L,R 1 01
0.6
M,D,P,L 1 03
0.6
1 02, 04
0.8
2, 3
1.2
M,D,P,L,R 1 02
1.0
M,D,P,L 1 04
1.0
Input offset current
I
IO
V
CM
= 0 V
1 All
10
nA
2, 3
20
M,D,P,L,R 1 01, 02 50
M,D,P,L 1 03, 04 50
Input bias current
I
IB
V
CM
= 0 V
1 All
25
nA
2, 3
50
M,D,P,L,R 1 01, 02
500
M,D,P,L 1 03, 04
500
Input noise voltage
E
n
f
O
= 1 Hz to 100 Hz, 3/ 7 01, 03 110 nV
T
A
= +25C
02, 04 265 RMS
Large-signal voltage gain
A
VS
V
O
= 10 V,
4 01, 03 1000 V/mV
R
L
= 10 k
5, 6 750
M,D,P,L,R 4 01 100
M,D,P,L 4 03 100
V
O
= 10 V, 3/
4 01, 03 500
R
L
= 2 k
5, 6 400
V
O
= 10 V,
4 02, 04 500
R
L
= 10 k
5, 6 375
M,D,P,L,R 4 02 50
M,D,P,L 4 04 50
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88565
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55C T
A
+125C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Min Max
Large-signal voltage gain
A
VS
V
O
= 10 V, 3/
4 02, 04 350 V/mV
R
L
= 2 k
5, 6 250
Output voltage swing
V
OP
R
L
= 2 k 3/
4, 5, 6 All
12
V
Supply current 4/
I
S
No load 1, 2, 3 All 11 mA
M,D,P,L,R 1 01, 02 11
M,D,P,L 1 03, 04 11
Slew rate
SR
A
VCL
= +21, R
L
= 10 k,
7 01, 03 1.4
V/s
T
A
= +25C 3/
02, 04 6.5
Common-mode rejection
CMR
V
CM
= IVR = 11 V 3/ 5/
1 01, 03 110 dB
2, 3 100
1 02, 04 105
2, 3 100
Power supply rejection ratio
PSRR
V
CC
= 4.5 V to 18 V 3/
1 01, 03 1.8
V/V
2, 3 5.6
1 02, 04 5.6
2, 3 10
1/ Device types 01 and 02 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation.
Device types 03 and 04 supplied to this drawing has been characterized through all levels M, D, P, L of irradiation.
However, device types 01 and 02 is only tested at the “R” level and device types 03 and 04 is only tested at the “L” level.
Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation
electrical measurements for any RHA level, T
A
= +25C. V
CC
= 15 V, R
S
= 50 .
2/ For device types 01 and 02, these parts may be dose rate sensitive in a space environment and may demonstrate
enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions
specified in MIL-STD-883, method 1019, condition A for device types 01 and 02 and condition D for device types 03 and 04.
Device types 03 and 04, have been tested at low dose rate.
3/ This parameter is not tested post-irradiation.
4/ I
S
limit equals the total of all amplifiers.
5/ IVR is defined as the V
CM
range used for the CMR test.

5962-8856502CA

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers QUAD HI-Spd LO-NOISE IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union