Features
Over temperature protection (with auto-restart)
Over current shutdown
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
IPS5451/IPS5451S
Data Sheet No.PD60159-K
Description
The IPS5451/IPS5451S are fully protected five terminal
high side switch with built in short circuit, over-tempera-
ture, ESD protection, inductive load capability and
diagnostic feedback. The over-current protection latches
off the device if the output current exceeds Ishutdown.
It can be reset by turning the input pin low. The over-
temperature protection turns off the high side switches
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7
o
C
below Tshutdown. A diagnostic pin is provided for status
feedback of over-current, over-temperature and open
load detection. The double level shifter circuitry allows
large offsets between the logic ground and the load
ground.
Product Summary
R
ds(on)
25m(max)
V
clamp
50V
I
shutdown
35A
I
open load
1A
Typical Connection
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Packages
5 Lead
TO220 - IPS5451
5 Lead
SMD220 - IPS5451S
Truth Table
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
H
L
H
L
H
L
H
L
Out
H
L
H
X
L
L (cycling)
L
L (latched)
Dg
H
H
L
H
L
H
L (cycling)
H
Load
Logic
signal
control
Logic
Logic Gnd
Load Gnd
Vcc
Out
Gnd
In
Dg
+ 5v
Status
feedback
+ VCC
Rdg
Rin
15K
www.irf.com 1
IPS5451/IPS5451S
2 WWW.IRF.COM
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
th
1 Thermal resistance
junction to case
a
R
th
2 Thermal resistance junction to ambient
## a
R
th
1 Thermal resistance with standard footprint 60
a
R
th
2 Thermal resistance with 1" square footprint 35
a
R
th
3 Thermal resistance junction to case
#
a
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T
Ambient
= 25
o
C unless otherwise specified).
Symbol Parameter Min. Max. Units Test Conditions
V
out
Maximum output voltage V
cc
-45 V
cc
+0.3
V
offset
Maximum logic ground to load ground offset V
cc
-45 V
cc
+0.3
V
in
Maximum Input voltage -0.3 5.5
I
in, max
Maximum IN current -5 10 mA
V
dg
Maximum diagnostic output voltage -0.3 5.5 V
I
dg, max
Maximum diagnostic output current -1 10 mA
I
sd cont.
Diode max. continuous current
(1)
(rth=62
o
C/W) IPS5451 2.8
(rth=80
o
C/W) IPS5451S 2.2
I
sd pulsed
Diode max. pulsed current
(1)
—45
ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0Ω, L=10µH
P
d Maximum power dissipation
(1)
(rth=62
o
C/W) IPS5451 2
(rth=80
o
C/W) IPS5451S 1.56
T
j
max. Max. storage & operating junction temp. -40
+150
T
lead
Lead temperature (soldering 10 seconds) 300
Vcc max. Maximum Vcc voltage 45 V
V
A
kV
W
o
C
IPS5451/IPS5451S
WWW.IRF.COM 3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V
cc
Continuous V
cc
voltage
5.5
18
V
IH
High level input voltage 4 5.5
V
IL 1
Low level input voltage
-0.3 0.9
I
out
Continuous output current
(
TAmbient = 85
o
C, Tj = 125
o
C, R
th
= 62
o
C/W) IPS5451 4
(
TAmbient = 85
o
C, Tj = 125
o
C, R
th
= 80
o
C/W) IPS5451S 3.5
I
out
Continuous output current
Tc=85
o
C (
TCase = 85
o
C, IN = 5V, Tj = 125
o
C, R
th
= 5
o
C/W) 14
R
in
Recommended resistor in series with IN pin 4
6
R
dg
Recommended resistor in series with DG pin 10
20
V
A
k
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
ds(on)
ON state resistance T
j
= 25
o
C 19 25
@Tj=25
o
C
R
ds(on)
ON state resistance @ V
cc
= 6V 22 30
(V
cc
=6V)
R
ds(on)
ON state resistance Tj = 150
o
C—
32
V
in
= 5V, I
out
= 14A
@Tj=150
o
C
V
cc oper.
Functional operating range 5.5
18
V clamp 1 V
cc
to OUT clamp voltage 1
45 49
I
d
= 10mA (see Fig.1 & 2)
V clamp 2
V
cc
to OUT clamp voltage 2
50 60
V
f
Body diode forward voltage 0.9 1.2
I
d
= 14A,
V
in
= 0V
I
out
Output leakage current 10 50
V
out
= 0V, Tj = 25
o
C
leakage
I
cc off
Supply current when OFF 10 50
V
in
= 0V,
V
out
= 0V
I
cc on
Supply current when ON 3.5 10 mA
V
in
= 5V
I
cc ac
Ripple current when ON (AC RMS)
20
µA V
in
= 5V
V
dgl
Low level diagnostic output voltage 0.1 0.4 V
I
dg
= 1.6 mA
Idg
Diagnostic output leakage current
1.5
10 V
dg
= 4.5V
leakage
V
ih
IN high threshold voltage
a
2.7 3.4
V
il
IN low threshold voltage 1 2.0
a
I
in
,
on
On state IN positive current
30
80
µA
V
in
= 4V
V
ccuv+
V
cc UVLO positive going threshold
4.7 5.5
V
ccuv-
V
cc UVLO negative going threshold
3.0 4.4
In
hyst
. Input hysteresis 0.2 0.6 1.5
Static Electrical Characteristics
(T
j
= 25
o
C, V
cc
= 14V unless otherwise specified.)
m
V
in
= 5V, I
out
= 14A
I
d
= I
shutdown
(see Fig.1 & 2)
V
in
= 5V, I
out
= 7A
µA
V
V
V
µA

IPS5451

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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