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IPS5451

P1-P3P4-P6P7-P9P10-P12P13-P13
IPS5451/IPS5451S
WWW.IRF.COM 7
Figure 7 - Iin ( µA ) Vs Tj (°C) Figure 8 - VIH, VIL threshold ( V ) Vs Tj (°C)
0
5
10
15
20
25
0 5 10 15 20 25
Figure 9 - Rdson (mΩ) vs Vcc (V) Figure 10 - Rdson (mΩ) vs Tj (°C)
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
VIH
VIL
H y s t er es i s
0
10
20
30
40
-50 -25 0 25 50 75 100 125 150
0
10
20
30
40
50
-50 -25 0 25 50 75 100 125 150
IPS5451/IPS5451S
8 WWW.IRF.COM
0
5
10
15
20
25
0 5 10 15 20 25
Figure 11 - Rdson (mΩ) vs Iout (A) Figure 12 - Isd (A) vs Time (S)
10
100
1000
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
100E+0
0
5
10
15
20
25
30
-50 0 50 100 150 200
rth = 5°C/W
rth = 15°C/W
rth = 30°C/W
T0220 free air 60°C/W
Figure 13 - Isd (A) vs Tj (°C) Figure 14 - Max. Cont. Ids ( A ) Vs
Amb. Temperature ( °C)
Current path capacity
should be above this curve
Load characteristic should
be below this curve
Tj=25
o
C Free air/
std footprint
0
10
20
30
40
50
-50-25 0 255075100125150
IPS5451/IPS5451S
WWW.IRF.COM 9
0.1
1
10
100
0.001 0.01 0.1 1 10 100
single pulse
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
Figure 15 -Max. I clamp ( A ) Vs Figure 16 - Transient Rth ( °C/W ) Vs Time (s)
Inductive Load ( m H )
0
2
4
6
0 5 10 15 20 25
Eo n
Eo ff
Figure 17 - Eon, Eoff (mJ) vs I
out
(A) Figure 18 - Eon @ Vcc=14V (mJ) vs Inductance (mH)
0.01
0.1
1
10
10 0
Rth std footprint/TO220 freeair
Rth junction to case
0
1
10
100
1000
10000
0.01 0.10 1.00 10.00 100.00
I=5
I=Imax vs L
(
see fi
g
.15
)
I=1
A
P1-P3P4-P6P7-P9P10-P12P13-P13

IPS5451

Mfr. #:
Buy IPS5451
Manufacturer:
Infineon Technologies
Description:
Gate Drivers IR_HSS-LSS-GATEDRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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