OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ADG759BCPZ-REEL7

P1-P3P4-P6P7-P9P10-P12
REV.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG758/ADG759
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700www.analog.com
Fax: © Analog Devices, Inc.,
3 , 4-/8-Channel Multiplexers
in Chip Scale Package
FUNCTIONAL BLOCK DIAGRAMS
S1
S8
A0
D
A1 A2
ADG758
S1A
A0
DA
S4A
S1B
S4B
DB
EN
ADG759
1 OF 4
DECODER
EN
1 OF 8
DECODER
A1
FEATURES
1.8 V to 5.5 V Single Supply
2.5 V Dual Supply
3 ON Resistance
0.75 ON Resistance Flatness
100 pA Leakage Currents
14 ns Switching Times
Single 8-to-1 Multiplexer ADG758
Differential 4-to-1 Multiplexer ADG759
20-Lead 4 mm 4 mm Chip Scale Package
Low Power Consumption
TTL-/CMOS-Compatible Inputs
For Functionally Equivalent Devices in 16-Lead TSSOP
Package, See ADG708/ADG709
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTION
The ADG758 and ADG759 are low voltage, CMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG758 switches one of eight inputs
(S1–S8) to a common output, D, as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG759 switches one
of four differential inputs to a common differential output as
determined by the 2-bit binary address lines A0 and A1. An EN
input on both devices is used to enable or disable the device. When
disabled, all channels are switched OFF.
Low power consumption and an operating supply range of 1.8 V to
5.5 V make the ADG758 and ADG759 ideal for battery-powered,
portable instruments. All channels exhibit break-before-make
switching action preventing momentary shorting when switch-
ing channels.
These switches are designed on an enhanced submicron process
that provides low power dissipation yet gives high switching
speed, very low ON resistance and leakage currents. ON resistance
is in the region of a few ohms and is closely matched between
switches and very flat over the full signal range. These parts can
operate equally well as either multiplexers or demultiplexers
and have an input signal range that extends to the supplies.
The ADG758 and ADG759 are available in 20-lead chip
scale packages.
PRODUCT HIGHLIGHTS
1. Small 20-Lead 4 mm × 4 mm Chip Scale Packages (CSP).
2. Single/Dual Supply Operation. The ADG758 and ADG759
are fully specified and guaranteed with 3 V and 5 V single-
supply and ±2.5 V dual-supply rails.
3. Low R
ON
(3 Ω Typical).
4. Low Power Consumption (<0.01 µW).
5. Guaranteed Break-Before-Make Switching Action.
B
2013
781/461-3113
–2–
REV.
ADG758/ADG759–SPECIFICATIONS
1
(V
DD
= 5 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
ON Resistance (R
ON
)3 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
4.5 5 Ω max Test Circuit 1
ON Resistance Match Between 0.4 Ω typ
Channels (∆R
ON
) 0.8 Ω max V
S
= 0 V to V
DD
, I
DS
= 10 mA
ON Resistance Flatness (R
FLAT(ON)
)0.75 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
1.2 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ± 0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
± 0.1 ± 0.75 nA max Test Circuit 3
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
D
= V
S
= 1 V, or 4.5 V, Test Circuit 4
± 0.1 ± 0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
14 ns typ R
L
= 300 Ω, C
L
= 35 pF; Test Circuit 5
25 ns max V
S1
= 3 V/0 V, V
S8
= 0 V/3 V
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S
= 3 V; Test Circuit 6
t
ON
(EN) 14 ns typ R
L
= 300 Ω, C
L
= 35 pF
25 ns max V
S
= 3 V; Test Circuit 7
t
OFF
(EN) 7 ns typ R
L
= 300 Ω, C
L
= 35 pF
12 ns max V
S
= 3 V; Test Circuit 7
Charge Injection ± 3pC typ V
S
= 2.5 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 8
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
Channel-to-Channel Crosstalk –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 10
–3 dB Bandwidth 55 MHz typ R
L
= 50 Ω, C
L
= 5 pF; Test Circuit 11
C
S
(OFF) 13 pF typ f = 1 MHz
C
D
(OFF)
ADG758 85 pF typ f = 1 MHz
ADG759 42 pF typ f = 1 MHz
C
D
, C
S
(ON)
ADG758 96 pF typ f = 1 MHz
ADG759 48 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
B
–3–
REV.
ADG758/ADG759
SPECIFICATIONS
1
(V
DD
= 3 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
ON Resistance (R
ON
)8 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
11 12 Ω max Test Circuit 1
ON Resistance Match Between 0.4 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (∆R
ON
) 1.2 Ω max
LEAKAGE CURRENTS V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF) ± 0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
± 0.1 ± 0.75 nA max Test Circuit 3
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
S
= V
D
= 1 V or 3 V; Test Circuit 4
± 0.1 ± 0.75 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
TRANSITION
18 ns typ R
L
= 300 Ω, C
L
= 35 pF; Test Circuit 5
30 ns max V
S1
= 2 V/0 V, V
S2
= 0 V/2 V
Break-Before-Make Time Delay, t
D
8 ns typ R
L
= 300 Ω, C
L
= 35 pF
1 ns min V
S
= 2 V; Test Circuit 6
t
ON
(EN) 18 ns typ R
L
= 300 Ω, C
L
= 35 pF
30 ns max V
S
= 2 V; Test Circuit 7
t
OFF
(EN) 8 ns typ R
L
= 300 Ω, C
L
= 35 pF
15 ns max V
S
= 2 V; Test Circuit 7
Charge Injection ± 3pC typ V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 8
Off Isolation –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
Channel-to-Channel Crosstalk –60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 10
–3 dB Bandwidth 55 MHz typ R
L
= 50 Ω, C
L
= 5 pF; Test Circuit 11
C
S
(OFF) 13 pF typ f = 1 MHz
C
D
(OFF)
ADG758 85 pF typ f = 1 MHz
ADG759 42 pF typ f = 1 MHz
C
D
, C
S
(ON)
ADG758 96 pF typ f = 1 MHz
ADG759 48 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 3.3 V
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
B
P1-P3P4-P6P7-P9P10-P12

ADG759BCPZ-REEL7

Mfr. #:
Buy ADG759BCPZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 4:1 55MHz 3Ohm CMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet