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BSM35GD120DN2

P1-P3P4-P6P7-P9P10-P10
1 2006-01-31
BSM 35 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
V
CE
I
C
Package Ordering Code
BSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67
BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67
Maximum Ratings
Parameter
Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 k
Ω
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 80 °C
I
C
35
50
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
I
Cpuls
70
100
Power dissipation per IGBT
T
C
= 25 °C
P
tot
280
W
Chip temperature T
j
+ 150 °C
Storage temperature T
stg
-40 ... + 125
Thermal resistance, chip case R
thJC
≤
0.44 K/W
Diode thermal resistance, chip case R
thJC
D
≤ 0.8
Insulation test voltage, t = 1min. V
is
2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
2 2006-01-31
BSM 35 GD 120 DN2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 1.2 mA
V
GE(th)
4.5 5.5 6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 35 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 35 A, T
j
= 125 °C
V
CE(sat)
-
-
3.3
2.7
3.9
3.2
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
I
CES
-
-
2.4
0.6
-
1
mA
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
I
GES
- - 150
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 35 A
g
fs
11 - -
S
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
iss
- 2 -
nF
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
oss
- 0.3 -
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
rss
- 0.14 -
3 2006-01-31
BSM 35 GD 120 DN2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 35 A
R
Gon
= 39
Ω
t
d(on)
- 60 120
ns
Rise time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 35 A
R
Gon
= 39
Ω
t
r
- 60 120
Turn-off delay time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 35 A
R
Goff
= 39
Ω
t
d(off)
- 400 600
Fall time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 35 A
R
Goff
= 39
Ω
t
f
- 50 75
Free-Wheel Diode
Diode forward voltage
I
F
= 35 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 35 A, V
GE
= 0 V, T
j
= 125 °C
V
F
-
-
1.9
2.3
-
2.9
V
Reverse recovery time
I
F
= 35 A, V
R
= -600 V, V
GE
= 0 V
di
F
/dt = -800 A/µs, T
j
= 125 °C
t
rr
- 0.25 -
µs
Reverse recovery charge
I
F
= 35 A, V
R
= -600 V, V
GE
= 0 V
di
F
/dt = -800 A/µs
T
j
= 25 °C
T
j
= 125 °C
Q
rr
-
-
5
2
-
-
µC
P1-P3P4-P6P7-P9P10-P10

BSM35GD120DN2

Mfr. #:
Buy BSM35GD120DN2
Manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 35A 3-PHASE
Lifecycle:
New from this manufacturer.
Delivery:
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