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BSM35GD120DN2

P1-P3P4-P6P7-P9P10-P10
7 2006-01-31
BSM 35 GD 120 DN2
Typ. switching time
I = f (I
C
) , inductive load , T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, R
G
= 39
0 10 20 30 40 50 60 A 80
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) , inductive load ,
T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, I
C
= 35 A
0 20 40 60 80 100 120 140 180
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.: V
CE
= 600 V, V
GE
= ± 15 V, R
G
= 39
0 10 20 30 40 50 60 A 80
I
C
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) , inductive load , T
j
= 125°C
par.: V
CE
= 600V, V
GE
= ± 15 V, I
C
= 35 A
0 20 40 60 80 100 120 140 180
R
G
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
8 2006-01-31
BSM 35 GD 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter: T
j
0.0 0.5 1.0 1.5 2.0 V 3.0
V
F
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
F
T
j
=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC
= (t
p
)
parameter: D = t
p
/ T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
BSM 35 GD 120 DN2
Gehäusemaße / Schaltbild
Package outline / Circuit diagramm
9 2006-01-31
P1-P3P4-P6P7-P9P10-P10

BSM35GD120DN2

Mfr. #:
Buy BSM35GD120DN2
Manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 35A 3-PHASE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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