NXP Semiconductors
PSMN4R2-30MLD
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
PSMN4R2-30MLD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 August 2015 7 / 13
Symbol Parameter Conditions Min Typ Max Unit
Q
oss
output charge V
GS
= 0 V; V
DS
= 15 V; f = 1 MHz;
T
j
= 25 °C
- 16.8 - nC
Source-drain diode
V
SD
source-drain voltage I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 15 - 0.81 1.2 V
t
rr
reverse recovery time - 26 52 ns
Q
r
recovered charge [1] - 15 30 nC
t
a
reverse recovery rise
time
- 12.7 - ns
t
b
reverse recovery fall
time
- 13.3 - ns
S softness factor
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 15 V; Fig. 16
- 1.05 -
[1] includes capacitive recovery
aaa-009549
0 0.5 1 1.5 2 2.5 3
0
30
60
90
120
V
DS
(V)
I
D
I
D
(A)(A)
2.4 V2.4 V
2.6 V2.6 V
2.8 V2.8 V
V
GS
= 3 VV
GS
= 3 V
3.5 V3.5 V
4.5 V4.5 V10 V10 V
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-009550
0 2 4 6 8 10 12 14 16
0
4
8
12
16
20
V
GS
(V)
R
DSon
R
DSon
(mΩ)(mΩ)
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values