3
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Symbol Parameter
71V016SA10 71V016SA12 71V016SA15 71V016SA20
Unit
Com'l Ind'l Com'l Ind'l Com'l Ind'l Com'l Ind'l
I
CC
Dynamic Operating Current
CS ≤ V
LC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Max. 160 170 150 160 130 130 120 120
mA
Typ.
(4)
65 -- 60 -- 55 -- 50 --
I
SB
Dynamic Standby Power Supply Current
CS ≥ V
HC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
45 50 40 45 35 35 30 30
mA
I
SB1
Full Standby Power Supply Current (static)
CS ≥ V
HC
, Outputs Open, V
DD
= Max., f = 0
(3)
10 10 10 10 10 10 10 10 mA
3834 tbl 08
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Recommended DC Operating
Conditions
DC Electrical Characteristics
(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. V
IH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
Symbol Rating Value Unit
V
DD
Supply Voltage Relative to V
SS
–0.5 to +4.6 V
V
IN
, V
OUT
Terminal Voltage Relative to V
SS
–0.5 to V
DD
+0.5 V
T
BIAS
Temperature Under Bias –55 to +125
o
C
T
STG
Storage Temperature –55 to +125
o
C
P
T
Power Dissipation 1.25 W
I
OUT
DC Output Current 50 mA
3834 tbl 03
Grade Temperature V
SS
V
DD
Commercial 0°C to +70°C 0V See Below
Industrial -40°C to +85°C 0V See Below
3834 tbl 04
Symbol Parameter Min. Typ. Max. Unit
V
DD
(1)
Supply Voltage 3.15 3.3 3.6 V
V
DD
(2)
Supply Voltage 3.0 3.3 3.6 V
Vss Ground 0 0 0 V
V
IH
Input High Voltage 2.0
___ _
V
DD
+0.3
(3)
V
V
IL
Input Low Voltage –0.3
(4)
___ _
0.8 V
3834 tbl 05
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 6 pF
C
I/O
I/O Capacitance V
OUT
= 3dV 7 pF
3834 tbl 06
Symbol Parameter Test Condition
IDT71V016SA
UnitMin. Max.
|I
LI
| Input Leakage Current V
DD
= Max., V
IN
= V
SS
to V
DD
___
5µA
|I
LO
| Output Leakage Current V
DD
= Max., CS = V
IH
, V
OUT
= V
SS
to V
DD
___
5µA
V
OL
Output Low Voltage I
OL
= 8mA, V
DD
= Min.
___
0.4 V
V
OH
Output High Voltage I
OH
= –4mA, V
DD
= Min. 2.4
__ _
V
3834 tbl 07
