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HMC930A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
GaAs, pHEMT, MMIC,
0.25 W Power Amplifier, DC to 40 GHz
Data Sheet
HMC930A
Rev. 0 Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2015 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (P
SAT
): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics
FUNCTIONAL BLOCK DIAGRAM
1
2
34
5
678
V
GG
1
V
GG
2
RFIN
ACG4
ACG3
ACG1
ACG2
RFOUT/V
DD
HMC930A
13738-001
Figure 1.
GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic,
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from dc to 40 GHz. The HMC930A provides 13 dB of
gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB
gain compression, requiring 175 mA from a 10 V supply. The
HMC930A exhibits a slightly positive gain slope from 8 GHz to
32 GHz, making it ideal for electronic warfare (EW), electronic
countermeasures (ECM), radar, and test equipment
applications. The HMC930A amplifier inputs/outputs (I/Os) are
internally matched to 50 Ω, facilitating integration into multichip
modules (MCMs). All data is taken with the chip connected via
two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm
(12 mils).
HMC930A Data Sheet
Rev. 0 | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Electrical Specifications ................................................................... 3
DC to 12 GHz Frequency Range ................................................ 3
12 GHz to 32 GHz Frequency Range ......................................... 3
32 GHz to 40 GHz Frequency Range ......................................... 4
Total Supply Current by V
DD
....................................................... 4
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ..............................6
Interface Schematics .....................................................................7
Typical Performance Characteristics ..............................................8
Theory of Operation ...................................................................... 13
Applications Information .............................................................. 14
Biasing Procedures ..................................................................... 14
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ......................................................................................... 15
Outline Dimensions ....................................................................... 16
Die Packaging Information ....................................................... 16
Ordering Guide ............................................................................... 16
REVISION HISTORY
12
/15—Revision 0: Initial Version
Data Sheet HMC930A
Rev. 0 | Page 3 of 16
ELECTRICAL SPECIFICATIONS
DC TO 12 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 10 V, V
GG
2 = 3.5 V, I
DD
= 175 mA. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 175 mA, typical.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE DC 12 GHz
GAIN 11.5 13.5 dB
Gain Flatness ±0.5 dB
Gain Variation Over Temperature 0.01 dB/°C
RETURN LOSS
Input 18 dB
Output 28 dB
OUTPUT
Output Power for 1 dB Compression P1dB 21 23 dBm
Saturated Output Power P
SAT
25 dBm
Output Third-Order Intercept IP3 36 dBm
NOISE FIGURE 4.5 dB
SUPPLY CURRENT I
DD
V
DD
= 10 V, V
GG
1 = −0.8 V, typical 175 mA
12 GHz TO 32 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 10 V, V
GG
2 = 3.5 V, I
DD
= 175 mA. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 175 mA, typical.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 12 32 GHz
GAIN 11 13 dB
Gain Flatness ±0.3 dB
Gain Variation Over Temperature 0.017 dB/°C
RETURN LOSS
Input 16 dB
Output 20 dB
OUTPUT
Output Power for 1 dB Compression P1dB 22 dBm
Saturated Output Power P
SAT
24 dBm
Output Third-Order Intercept IP3 33.5 dBm
NOISE FIGURE 5 dB
SUPPLY CURRENT I
DD
V
DD
= 10 V, V
GG
1 = −0.8 V, typical 175 mA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

HMC930A

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Description:
RF Amplifier DC-45GHz 0.2W DISTRIBUTEDAMPLIFIER
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