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HMC930A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
HMC930A Data Sheet
Rev. 0 | Page 4 of 16
32 GHz TO 40 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 10 V, V
GG
2 = 3.5 V, I
DD
= 175 mA. Adjust V
GG
1 between −2 V to 0 V to achieve I
DD
= 175 mA, typical.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 32 40 GHz
GAIN 10 12 dB
Gain Flatness ±1.0 dB
Gain Variation Over Temperature 0.032 dB/°C
RETURN LOSS
Input 15 dB
Output 20 dB
OUTPUT
Output Power for 1 dB Compression P1dB 20 dBm
Saturated Output Power P
SAT
23 dBm
Output Third-Order Intercept IP3 29 dBm
NOISE FIGURE 7.5 dB
SUPPLY CURRENT I
DD
V
DD
= 10 V, V
GG
1 = −0.8 V, typical 175 mA
TOTAL SUPPLY CURRENT BY V
DD
Table 4.
Parameter Symbol Min Typ Max Unit
SUPPLY CURRENT I
DD
V
DD
= 9 V 175 mA
V
DD
= 10 V 175 mA
V
DD
= 11 V 175 mA
Data Sheet HMC930A
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Drain Bias Voltage (V
DD
) 13 V
Gate Bias Voltage
V
GG
1 −3 V to 0 V dc
V
GG
2
V
DD
= 12 V V
GG
2 = 5.5 V, I
DD
>145 mA
V
DD
= 8.5 V to 11 V
V
GG
2 = (V
DD
− 6.5 V) up to
4.5 V
V
DD
< 8.5 V V
GG
2 must remain > 2 V
RF Input Power (RFIN) 22 dBm
Channel Temperature 150°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C, Derate 69 mW/°C
Above 85°C)
2.1 W
Thermal Resistance
(Channel to Die Bottom)
31.1°C/W
Output Power into Voltage Standing
Wave Ratio (VSWR) > 7:1
24 dBm
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +85°C
ESD Sensitivity, Human Body Model
(HBM)
Class 1A, passed 250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
HMC930A Data Sheet
Rev. 0 | Page 6 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
34
5
678
V
GG
1
V
GG
2
RFIN
ACG4
ACG3
ACG1
ACG2
RFOUT/V
DD
HMC930A
TOP VIEW
(Not to Scale)
NOTES
1. DIE BOTTOM MUST BE CONNECTED TO RF/DC GROUND.
13738-002
Figure 2. Pad Configuration
Table 6. Pad Function Descriptions
Pad No. Mnemonic Description
1 RFIN RF Input. This pin is dc-coupled and matched to 50 Ω. A blocking capacitor is required on this pin.
2 V
GG
2
Gate Control 2 for the Amplifier. Attach bypass capacitors as shown in Figure 37. For nominal operation,
apply 3.5 V to V
GG
2.
3 ACG1 Low Frequency Termination 1. Attach bypass capacitors as shown in Figure 37.
4 ACG2 Low Frequency Termination 2. Attach bypass capacitors as shown in Figure 37.
5 RFOUT/V
DD
1
RF Output for the Amplifier (RFOUT).
DC Bias (V
DD
). Connect V
DD
to the bias tee network to provide the drain current (I
DD
). See Figure 37.
6 ACG3 Low Frequency Termination 3. Attach bypass capacitors as shown in Figure 37.
7 ACG4 Low Frequency Termination 4. Attach bypass capacitors as shown in Figure 37.
8 V
GG
1
Gate Control 1 for the Amplifier. Attach bypass capacitors as shown in Figure 37. Follow the procedures
described in the Biasing Procedures section.
Die Bottom GND Die bottom must be connected to RF/dc ground.
1
RFOUT/V
DD
is a multifunction pad.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

HMC930A

Mfr. #:
Buy HMC930A
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier DC-45GHz 0.2W DISTRIBUTEDAMPLIFIER
Lifecycle:
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