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PTFB212503FL-V2-R0

P1-P3P4-P6P7-P9P10-P12P13-P13
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-06-14
0
5
10
15
20
25
30
35
40
-55
-50
-45
-40
-35
-30
-25
-20
-15
32 34 36 38
40 42 44
46 48 50
Efficiency (%)
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
ACPR
IMD Low
IMD Up
Efficiency
RF Characteristics
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 55 W average, ƒ
1
= 2160 MHz, ƒ
2
= 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
— 18.0 — dB
Drain Efficiency
hD — 31 — %
Intermodulation Distortion IMD — –33 — dBc
Description
The PTFB212503FL is a 240-watt LDMOS FETs intended
for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include
input and output matching, high gain, wide signal bandwidth
and reduced memory effects for unparalleled DPD correcta-
bility. Manufactured with Wolfspeed's advanced LDMOS proc-
ess, this device provides excellent thermal performance and
superior reliability.
PTFB212503FL
Package H-34288-4/2
Features
• Broadbandinternalinputandoutputmatching
• EnhancedforuseinDPDerrorcorrectionsystems
• Widevideobandwidth
• Typicalsingle-carrierWCDMAperformanceat2170MHz,
30 V, I
DQ
= 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
• TypicalCWperformance,2170MHz,30V
- Output power at P1
dB
= 240 W
- Efficiency = 54 %
• Increasednegativegate-sourcevoltagerangefor
improved performance in Doherty peaking amplifiers
• IntegratedESDprotection:HumanBodyModel,Class2
(minimum)
• Capableofhandling10:1VSWR@30V,240W(CW)
output power
• Pb-free,RoHS-compliant
Thermally-Enhanced High Power RF LDMOS FET
240 W, 2110 – 2170 MHz
PTFB212503FL
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-06-14
2
PTFB212503FL
RF Characteristics (cont.)
Two-tone Specifications (tested in Wolfspeed test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 200 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17 18 — dB
Drain Efficiency
hD 39 40 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1.0 µA
Drain Leakage Current V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.05 — W
Operating Gate Voltage V
DS
= 30 V, I
DQ
= 1.85 A V
GS
2.3 2.8 3.3 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Junction Temperature T
J
200 °C
Storage Temperature Range T
STG
–40 to +150 °C
Thermal Resistance (T
CASE
= 70°C, 200 W CW) R
qJC
0.26 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFB212503FL V2 R0 PTFB212503FL-V2-R0 H-34288-4/2, earless flange Tape & Reel, 50 pcs
PTFB212503FL V2 R250 PTFB212503FL-V2-R250 H-34288-4/2, earless flange Tape & Reel, 250 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 08, 2018-06-14
3
PTFB212503FL
Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Efficiency
5
15
25
35
45
55
65
14
15
16
17
18
19
20
38 40 42
44 46 48 50
52 54
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz
Efficiency
Gain
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
15
20
25
30
35
40
45
50
55
60
2070 2090 2110 2130 2150 2170 2190 2210
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
Frequency (MHz)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 100 W
Gain
Efficiency
RL
IMD 3
-55
-50
-45
-40
-35
-30
-25
32 34 36 38 40 42 44 46 48 50
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, 3GPP signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
2170 MHz Low
2170 MHz Up
2140 MHz Low
2140 MHz Up
2110 MHz Low
2110 MHz Up
Typical Performance (data taken in a production test fixture)
P1-P3P4-P6P7-P9P10-P12P13-P13

PTFB212503FL-V2-R0

Mfr. #:
Buy PTFB212503FL-V2-R0
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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