Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PTFB212503FL-V2-R0
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 08, 2018-06-14
4
P
TFB212
503FL
0
5
10
15
20
25
30
35
40
45
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37
39
41
43
45
47
49
51
53
55
Ef
f
i
c
ienc
y (%)
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
T
w
o-t
one
Dr
i
ve-
up
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 2170
M
Hz, ƒ
2
= 2169
M
H
z
Ef
f
ic
ienc
y
IM
D 3rd
0
10
20
30
40
50
15
16
17
18
19
20
37
39
41
43
45
47
49
51
53
55
Ef
f
i
c
ienc
y (%)
G
ain (dB)
O
utput Pow
er,
PE
P (dB
m
)
T
w
o
-
t
one
Dr
ive
-
up
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 2170
M
Hz, ƒ
2
= 2169
M
H
z
G
ain
Ef
f
ic
ienc
y
-60
-55
-50
-45
-40
-35
-30
-25
-20
35
40
45
50
55
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
T
hir
d
Or
der
I
nt
er
m
odul
ati
on Dist
or
ti
on
vs. Out
put Pow
er
V
DD
= 30 V
,
I
DQ
= 1.85
A,
2170
M
H
z
2140
M
H
z
2110
M
H
z
-70
-60
-50
-40
-30
-20
35
40
45
50
55
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
Int
erm
odul
at
i
on
D
ist
or
ti
on
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 2170
M
Hz, ƒ
2
= 2169
M
H
z
3rd O
rder
7th
5th
T
ypical P
erformance
(cont.)
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 08, 2018-06-14
5
P
TFB212
503FL
16
17
18
19
35
40
4
5
50
55
Pow
er G
ain
(dB)
O
utput Pow
er
(dBm
)
CW
Per
f
or
m
ance
Gai
n v
s. Out
put
Pow
er
V
DD
= 30 V
,
ƒ = 2170
M
H
z
I
DQ
= 1.85
A
I
DQ
= 2.11
A
I
DQ
= 1.30
A
0
10
20
30
40
50
60
-80
-70
-60
-50
-40
-30
-20
33
35
37
39
41
43
45
47
49
51
D
rain Ef
f
ic
iency (%)
IM
3
(
dBc
)
O
utput Pow
er
(dBm
)
Si
ngl
e-c
ar
ri
er
WCDM
A
V
DD
= 30
V
, I
DQ
= 1.85
A ƒ
=
21
70
M
H
z, 3GP
P
WC
D
M
A,
P
AR
= 8.5
dB, B
W
3.84
M
H
z
IM
3
Ef
f
ic
ienc
y
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
10
15
20
25
30
35
40
45
50
55
60
1960
2020
2080
2140
2200
2260
2320
R
eturn Los
s
(dB)
/ IM
3 (dBc
)
G
ain (dB) /
Ef
f
icienc
y (%)
Frequenc
y
(M
H
z)
Si
ngl
e-car
r
ier
W
CDM
A,
3G
GP
B
r
oadband
V
DD
= 30 V
,
I
DQ
= 1.85
A,
P
O
U
T
= 63
W
G
ain
Ef
f
ic
ienc
y
R
L
IM
3
0
10
20
30
40
50
60
15
16
17
18
19
20
21
35
40
45
50
55
D
rain Ef
f
ic
iency (%)
G
ain (dB)
O
utput Pow
er
(dBm
)
CW
Per
f
or
m
ance
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ =
2
170
M
H
z
+
25
°
C
+
85
°
C
–10
°
C
Ef
f
ic
ienc
y
G
ain
T
ypical P
erformance
(cont.)
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 08, 2018-06-14
6
P
TFB212
503FL
0.1
0.3
0.5
0.2
0.4
0
.
1
0
.
1
0
.
3
0
.
2
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
<
-
-
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Sou
rce
220
0 MHz
208
0 MHz
Z S
ourc
e
Z Loa
d
G
S
D
Z
0
= 50
W
Broadband Cir
cuit Impedance
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
2080
2.42
–5.57
1.34
–4.23
2110
2.31
–5.36
1.32
–4.12
2140
2.21
–5.15
1.29
–4.01
2170
2.12
–4.96
1.27
–3.91
2200
2.04
–4.77
1.25
–3.81
See next pa
ge for reference cir
cuit information
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PTFB212503FL-V2-R0
Mfr. #:
Buy PTFB212503FL-V2-R0
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PTFB212503FL-V2-R0
PTFB212503FL-V2-R250