IRAM109-015SD
4 www.irf.com
Recommended Operating Conditions
Symbol Definition Min Typ Max Units
V
+
Positive Bus Input Voltage --- --- 360
V
B1,2,3
High side floating supply voltage
V
S
+10 V
S
+15 V
S
+20
V
DD
Low side and logic fixed supply voltage 10 15 20 V
V
IN
Logic input voltage (IN & SD) - Note 2
V
SS
---
V
DD
V
F
p
PWM Carrier Frequency --- 20 --- KHz
V
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at
15V differential.
Note 2: Logic operational for V
s
from COM-5V to COM+500V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details).
Static Electrical Characteristics (T
J
= 25°C Unless Otherwise Specified)
Symbol Definition Min Typ Max Units
V
DDUV+,
V
BSUV+
V
DD
and V
BS
supply undervoltage, Positive going threshold
88.99.8V
V
DDUV-,
V
BSUV-
V
DD
and V
BS
supply undervoltage, Negative going threshold
7.4 8.2 9 V
I
QBS
Quiescent V
BS
supply current
20 75 130 µA
I
QDD
Quiescent V
DD
supply current
0.4 1 1.6 mA
I
LK
Offset Supply Leakage Current --- --- 50 µA
V
BIAS
(V
DD
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and are
applicable to all channels (Static Electrical Characteristics are Based on Driver IC Data Sheet).
Dynamic Electrical Characteristics
(T
J
= 25°C Unless Otherwise Specified)
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig. 13a)
--- 2.4 --- µs
T
OFF
Input to Output propagation turn-
off delay time (see fig. 13b)
--- 570 --- ns
I
D
=1.5A, V
+
=360V
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
Shunt
Resistance 218
220 222
mƻ
T
C
= 25°C
T
Coeff
Temperature Coefficient 0 --- 200 ppm/°C
T
Range
Temperature Range 0
--- 125
°C
