IRAM109-015SD
www.irf.com 7
Typical Application Connection – IRAM109-015SD
1
2
3
4
5
6
7
8
12
15
16
19
11
IN1
IN2
TH
SD
VCC
Isense
VSS
DCgnd
VB2
PO2
PO1
VB1
VBUS
+
Application Circuit Recommendation
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and PO1,2-VB1,2 terminals, and the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044, or Figure 12. Bootstrap capacitor value must
be selected to limit the power dissipation of the internal resistor in series with V
CC
(See maximum ratings
Table on page 3).
4. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is
recommended to provide isolation material between case and heat sink to avoid electrical
shock.
IRAM109-015SD
8 www.irf.com
Module Pin-Out Description
Pin Name Description
1 IN1 Logic Input Gate Driver - Phase 1
2 IN2 Logic Input Gate Driver - Phase 2
3
V
TH
Temperature Feedback
4 SD Shun-down Function
5
V
DD
+15V Main Supply
6
V
SS
Negative Main Supply
7
I
SENSE
Current Feedback
8
V
-
Negative Bus Input Voltage
9NAnone
10 NA none
11
V
S2
Output 2 - High Side Floating Supply Offset Voltage
12
V
B2
High Side Floating Supply voltage 2
13 NA none
14 NA none
15
V
S1
Output 1 - High Side Floating Supply Offset Voltage
16
V
B1
High Side Floating Supply voltage 1
17 NA none
18 NA none
19
V
+
Positive Bus Input Voltage
1
19
IRAM109-015SD
www.irf.com 9
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
02468101214161820
PWM Sw itching Freque ncy - kHz
Maximum Output Phase RMS Current - A
T
C
= 80º
C
T
C
= 90º
C
T
C
= 100º
C
T
J
= 15C
Sinusoidal Modulation
Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V
+
=360V, T
J
=150°C, F
MOD
=50Hz, MI=0.8, PF=0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1 10 100
Modulation Frequency - Hz
Maximum Output Phase RMS Current - A
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz
T
J
= 150ºC
Sinusoidal Modulation
Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V
+
=360V, T
J
=150°C, MI=0.8, PF=0.6

IRAM109-015SD

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HYBRID H-BRIDGE 1A 500V SIP-S
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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