NCP1124, NCP1126, NCP1129
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4
Table 4. MAXIMUM RATINGS (Note 5)
Rating
Symbol Value Unit
Drain Input Voltage (Referenced to Source Terminal) NCP112x V
Drain
−0.3 to 650 V
Drain Maximum Pulsed Current NCP1129
(10 ms Single Pulse, T
J
= 25°C) NCP1126
NCP1124
I
DM
27
11
7
A
Single Pulse Avalanche Energy NCP1126, NCP1129
NCP1124
E
AS
96
60
mJ
Supply Input Voltage V
CC(MAX)
−0.3 to 35 V
Current Sense Input Voltage V
CS
−0.3 to 10 V
Feedback Input Voltage V
FB
−0.3 to 10 V
Operating Junction Temperature T
J
−40 to 150
_C
Storage Temperature Range T
STG
–60 to 150
_C
Power Dissipation (T
A
= 25_C, 2 Oz Cu, 600 mm
2
Printed Circuit Copper Clad)
P
D
1.5 W
Thermal Resistance, Junction to Ambient 2 Oz Cu Printed Circuit Copper Clad
Low Conductivity (Note 6)
High Conductivity (Note 7)
R
θ
JA
128
78
_C/W
ESD Capability (Note 8)
Human Body Model ESD Capability per JEDEC JESD22−A114F.
Machine Model ESD Capability per JEDEC JESD22−A115C.
Charged−Device Model ESD Capability per JEDEC JESD22−C101E.
2000
200
500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
5. This device contains Latch−Up protection and exceeds ±100 mA per JEDEC Standard JESD78.
6. Low Conductivity Board. As mounted on 40 x 40 x 1.5 mm FR4 substrate with a single layer of 50 mm
2
of 2 oz copper trances and heat
spreading area. As specified for a JEDEC 51 low conductivity test PCB. Test conditions were under natural convection of zero air flow.
7. High Conductivity Board. As mounted on 40 x 40 x 1.5 mm FR4 substrate with a single layer of 600 mm
2
of 2 oz copper trances and heat
spreading area. As specified for a JEDEC 51 high conductivity test PCB. Test conditions were under natural convection of zero air flow.
8. The Drain pins (5 and 6), are rated to the maximum voltage of the device, or 650 V.
NCP1124, NCP1126, NCP1129
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5
Table 5. ELECTRICAL CHARACTERISTICS
(V
CC
= 12 V, for typical values T
J
= 25_C, for min/max values, T
J
is –40_C to 125_C, unless otherwise noted)
Characteristics
Conditions Symbol Min Typ Max Unit
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Operating Hysteresis
V
CC
increasing
V
CC
decreasing
V
CC(on)
− V
CC(off)
V
CC(on)
V
CC(off)
V
CC(HYS)
15.75
7.75
6.0
17
8.5
20
9.25
V
V
CC
Overvoltage Protection Threshold V
CC(OVP)
26.3 28 29.3 V
V
CC
Overvoltage Protection Filter Delay t
OVP(delay)
26
ms
V
CC
Clamp Voltage in Latch Mode
I
CC
= 500 mA
V
ZENER
5 6.2 7.15 V
Supply Current
Startup Current
Skip Current
Operating Current at 65 kHz
Operating Current at 100 kHz
V
CC
= V
CC(on)
– 0.5 V
V
FB
= V
skip
− 0.1 V
I
FB
= 50 mA, f
SW
= 65 kHz
I
FB
= 50 mA, f
SW
= 100 kHz
I
CC1
I
CC2
I
CC3
I
CC4
700
1900
3300
15
900
3100
4000
mA
Current Consumption in Latch Mode
T
J
= –40_C to 125_C
I
CC(latch)
42
mA
POWER SWITCH CIRCUIT
Off−State Leakage Current
T
J
= 125_C, V
Drain
= 650 V
I
Drain(off)
20
mA
Breakdown Voltage
T
J
= 25_C, I
Drain
= 250 mA, V
FB
= 0 V
V
BR(DSS)
650 V
ON State Resistance
NCP1129
NCP1126
NCP1124
I
Drain
= 100 mA
V
CC
= 10 V, T
J
= 25_C
V
CC
= 10 V, T
J
= 125_C
V
CC
= 10 V, T
J
= 25_C
V
CC
= 10 V, T
J
= 125_C
V
CC
= 10 V, T
J
= 25_C
V
CC
= 10 V, T
J
= 125_C
R
DS(on)
2.1
5.4
9.0
2.75
5.0
7.7
13.1
13.2
23.5
W
Output Capacitance NCP1129
NCP1126
NCP1124
V
DS
= 25 V, V
CC
= 0 V, f = 1 MHz
V
DS
= 25 V, V
CC
= 0 V, f = 1 MHz
V
DS
= 25 V, V
CC
= 0 V, f = 1 MHz
C
OSS
67.3
29.2
16.5
pF
Switching Characteristics
NCP1124 Rise Time
Fall Time
NCP1126 Rise Time
Fall Time
NCP1129 Rise Time
Fall Time
(V
DS
= 325 V, I
Drain
= 1 A,
V
GS
= 10 V, R
g
= 4.7 W)
(V
DS
= 325 V, I
Drain
= 1.8 A,
V
GS
= 10 V, R
g
= 4.7 W)
(V
DS
= 325 V, I
Drain
= 5.5 A,
V
GS
= 10 V, R
g
= 4.7 W)
t
r
t
f
t
r
t
f
t
r
t
f
4.25
9.32
7.44
5.94
7.54
5.94
ns
CURRENT SENSE
Current Sense Voltage Threshold
V
CS
increasing, T
J
= 25_C
V
CS
increasing
V
ILIM1
V
ILIM2
730
720
785
800
840
880
mV
Cycle by Cycle Current Sense
Propagation Delay
NCP1129
NCP1126
NCP1124
V
CS
dv/dt = 1 V/ms, measured from
V
ILIM1
to DRV falling edge
t
CS(delay)
100
50
50
150
150
150
ns
Cycle by Cycle Leading Edge Blanking
Duration
t
CS(LEB)
320 400 ns
INTERNAL OSCILLATOR
Oscillation Frequency
65 kHz Version
100 kHz Version
f
OSC1
f
OSC2
61
92
65
100
71
108
kHz
Maximum Duty Ratio D
MAX
78 80 82 %
Frequency Jittering in Percentage of f
OSC
f
jitter
±5 %
NCP1124, NCP1126, NCP1129
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6
Table 5. ELECTRICAL CHARACTERISTICS
(V
CC
= 12 V, for typical values T
J
= 25_C, for min/max values, T
J
is –40_C to 125_C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolConditions
FEEDBACK SECTION
Internal Pull−up Resistor
R
up
13
kW
Equivalent ac resistor from FB to GND R
eq
15
kW
V
FB
to Internal Current Setpoint
Division Ratio
I
ratio
4
Feedback Voltage Below Which the
Peak Current is Frozen
V
FB(freeze)
0.85 1 1.15 V
FREQUENCY FOLDBACK
Frequency Foldback Level on the FB
47% of maximum peak current V
FB(fold)
1.35 1.5 1.78 V
Transition Frequency Below Which
Skip−Cycle occurs
f
trans
22 26 30 kHz
Feedback voltage level when
Frequency Foldback ends
f
SW
= f
MIN
V
FB(fold,end)
410 450 490 mV
Skip−Cycle Level Voltage on The FB pin V
skip
360 400 440 mV
Hysteresis on The Skip Comparator V
skip(HYS)
40 mV
FAULT PROTECTION
Soft−Start Period
Measured from 1
st
drive pulse to
V
CS
= V
ILIM
t
SSTART
4.0 ms
Overload Fault Timer V
CS
= V
ILIM
t
OVLD
35 50 65 ms
TEMPERATURE MANAGEMENT
Temperature Shutdown
(Note 9) TSD 130
_C
Hysteresis Guaranteed by Design 20
_C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. The value is not subjected to production test − verified by design/characterization. The thermal shutdown temperature refers to the junction
temperature of the controller.

NCP1124AP65G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
AC/DC Converters HV SWITCHER FOR OFFLINE P
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