2004 Jan 22 2
NXP Semiconductors Product data sheet
NPN switching transistor PMBT2369
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching, especially in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMBT2369 *1J
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMBT2369 − plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 40 V
V
CEO
collector-emitter voltage open base − 15 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 200 mA
I
CM
peak collector current − 300 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
