2004 Jan 22 3
NXP Semiconductors Product data sheet
NPN switching transistor PMBT2369
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 20 V − 400 nA
I
E
= 0; V
CB
= 20 V; T
j
= 125 °C − 30 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 4 V − 100 nA
h
FE
DC current gain I
C
= 10 mA; V
CE
= 1 V 40 120
I
C
= 10 mA; V
CE
= 1 V; T
amb
= −55 °C 20 −
I
C
= 100 mA; V
CE
= 2 V 20 −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA − 250 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA 700 850 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz − 4 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 500 − MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
turn-on time I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
= −1.5 mA
− 10 ns
t
d
delay time − 4 ns
t
r
rise time − 6 ns
t
off
turn-off time − 20 ns
t
s
storage time − 10 ns
t
f
fall time − 10 ns
