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IRF9Z20PBF

P1-P3P4-P6P7-P7
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
S16-0015-Rev. C, 18-Jan-16
1
Document Number: 90121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• P-channel versatility
• Compact plastic package
•Fast switching
• Low drive current
• Ease of paralleling
• Excellent temperature stability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L =100 μH, R
g
= 25
c. 0.063" (1.6 mm) from case.
PRODUCT SUMMARY
V
DS
(V) -50
R
DS(on)
()V
GS
= -10 V 0.28
Q
g
max. (nC) 26
Q
gs
(nC) 6.2
Q
gd
(nC) 8.6
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
G
D
S
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-50
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
-9.7
AT
C
= 100 °C -6.1
Pulsed Drain Current
a
I
DM
-39
Linear Derating Factor 0.32 W/°C
Inductive Current, Clamped L = 100 μH I
LM
-39 A
Unclamped Inductive Current (Avalanche current) I
L
-2.2 A
Maximum Power Dissipation T
C
= 25 °C P
D
40 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak temperature)
c
for 10 s 300
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
S16-0015-Rev. C, 18-Jan-16
2
Document Number: 90121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-80
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
1.0 -
Maximum Junction-to-Case (Drain) R
thJC
-3.1
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -50 - - V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -2.0 - -4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 500 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= max. rating, V
GS
= 0 V - - -250
μA
V
DS
= max. rating x 0,8, V
GS
= 0 V, T
J
=125°C - - -1000
Drain-Source On-State Resistance R
DS(on)
V
GS
= -10 V I
D
= -5.6 A
b
- 0.20 0.28
Forward Transconductance g
fs
V
DS
= 2 x V
GS
, I
DS
= -5.6 A
b
2.3 3.5 - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 9
- 480 -
pFOutput Capacitance C
oss
- 320 -
Reverse Transfer Capacitance C
rss
-58-
Total Gate Charge Q
g
V
GS
= -10 V
I
D
= -9.7 A, V
DS
= -0.8 max.
rating. see fig. 17
-1726
nC Gate-Source Charge Q
gs
-4.16.2
Gate-Drain Charge Q
gd
-5.78.6
Turn-On Delay Time t
d(on)
V
DD
= -25 V, I
D
= -9.7 A,
R
g
= 18 , R
D
= 2.4, see fig. 16 (MOSFET
switching times are essentially independent
of operating temperature)
-8.212
ns
Rise Time t
r
-5786
Turn-Off Delay Time t
d(off)
-1218
Fall Time t
f
-2538
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
---9.7
A
Pulsed Diode Forward Current
a
I
SM
---39
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 9.7 A, V
GS
= 0 V
b
---6.3V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 9.7 A, dI/dt = 100 A/μs
b
56 110 280 ns
Body Diode Reverse Recovery Charge Q
rr
0.17 0.34 0.85 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRF9Z20, SiHF9Z20
www.vishay.com
Vishay Siliconix
S16-0015-Rev. C, 18-Jan-16
3
Document Number: 90121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 6 - Typical Source-Drain Diode Forward Voltage
90121_01
- 4 V
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
80 µs Pulse Test
V
GS
= - 10, - 8 V
- 6 V
- 5 V
- 7 V
15
12
0
3
6
9
5
0
2520
1510
10
2
10
1
0
Negative V
GS
,
Gate-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
90121_02
0.1
5
2
5
2
5
2
246
8
10
80 µs Pulse Test
V
DS
= 2 x V
GS
T
J
= 25 °C
T
J
= 150 °C
Negative I
D
, Drain Current (A)
Negative V
DS
,
Drain-to-Source Voltage (V)
5
90121_03
80 µs Pulse Test
- 4 V
V
GS
= - 10
- 6 V
- 5 V
- 7 V
- 8 V
15
12
0
3
6
9
1
0
4
32
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
3
10
2
2
5
0.1
2
5
1
2
5
10
2
5
25
110
25
10
2
90121_04
DC
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
5.0
4.0
3.0
2.0
0.0
1.0
0
4
20
1612
8
90121_06
T
J
= 25 °C
T
J
= 150 °C
80 µs Pulse Test
V
DS
< - 50 V
g
fs
,Transconductance (S)
Negative I
D
,
Drain Current (A)
10
2
1
Negative V
SD
, Source-to-Drain Voltage (V)
Negative I
DR
, Reverse Drain Current (A)
08642
90121_07
T
J
= 25 °C
T
J
= 150 °C
10
0.1
10
5
2
5
2
5
2
P1-P3P4-P6P7-P7

IRF9Z20PBF

Mfr. #:
Buy IRF9Z20PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Chan 50V 9.7 Amp
Lifecycle:
New from this manufacturer.
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