STTH200L06TV1 Datasheet STTH200L06TV1 | P4-P6

September 2011 Doc ID 10767 Rev 2 1/8

8

STTH200L06TV

Turbo 2 ultrafast high voltage rectifier

Features

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

Description

The STTH200L06TV, which is using ST Turbo 2

600 V technology, is specially suited for use in

switching power supplies, and industrial

applications (such as welding), as rectification

diode.

TM: ISOTOP is a trademark of STMicroelectronics

Table 1. Device summary

Symbol Value

I

F(AV)

Up to 2 x 120 A

V

RRM

600 V

T

j

150 °C

V

F

(typ) 0.95 V

t

rr

(max) 80 ns

ISOTOP

STTH200L06TV1

A1 K1

A2 K2

K1

K2

A2

A1

www.st.com

Copyright STMicroelectronics Company Internal Unauthorized reproduction and communication strictly prohibited

Revision

11

Document

CD00043024

IN APPROVAL

/

2.1

4

Draft - Draft - Draft

Characteristics STTH200L06TV

2/8 Doc ID 10767 Rev 2

1 Characteristics

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

= P

(diode1)

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

To evaluate the maximum conduction losses use the following equation:

P = 0.93 x I

F(AV)

+ 0.0027 I

F

2

(RMS)

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 600 V

I

F(RMS)

Forward rms current 180 A

I

F(AV)

Average forward current, δ = 0.5

T

c

= 65 °C Per diode 100 A

T

c

= 35 °C Per diode 120 A

I

FSM

Surge non repetitive forward current t

p

= 10 ms Sinusoidal 800 A

T

stg

Storage temperature range -55 to + 150 °C

T

j

Maximum operating junction temperature 150 °C

Table 3. Thermal parameter

Symbol Parameter Maximum Unit

R

th(j-c)

Junction to case

Per diode 0.60

°C/WTot a l 0 . 3 5

R

th(c)

Coupling 0.1

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

R

(1)

1. Pulse test: t

p

= 5 ms, δ < 2 %

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

100

µA

T

j

= 125 °C 100 1000

V

F

(2)

2. Pulse test: t

p

= 380 µs, δ < 2 %

Forward voltage drop T

j

= 25 °C I

F

= 100 A 1.55

V

T

j

= 150 °C 0.95 1.20

Copyright STMicroelectronics Company Internal Unauthorized reproduction and communication strictly prohibited

Revision

11

Document

CD00043024

IN APPROVAL

/

2.1

5

Draft - Draft - Draft

STTH200L06TV Characteristics

Doc ID 10767 Rev 2 3/8

Table 5. Dynamic characteristics (per diode)

Symbol Parameter

Test conditions

Min. Typ. Max. Unit

t

rr

Reverse recovery

time

T

j

= 25 °C

I

F

= 0.5 A, I

rr

= 0.25 A,

I

R

= 1 A

80

ns

I

F

= 1 A, dI

F

/dt = 50 A/µs,

V

R

= 30 V

85 120

I

RM

Reverse recovery

current

T

j

= 125 °C

I

F

= 100 A, dI

F

/dt = 400 A/µs,

dI

F

/dt = 100 A/µs

15 20 A

t

fr

Forward recovery

time

T

j

= 25 °C

I

F

= 100 A, dI

F

/dt = 200 A/µs

V

FR

= 1.1 x V

Fmax

700 ns

V

FP

Forward recovery

voltage

T

j

= 25 °C

I

F

= 100 A, dI

F

/dt = 200 A/µs

V

FR

= 1.1 x V

Fmax

3.4 V

Figure 1. Conduction losses versus average

forward current (per diode)

Figure 2. Forward voltage drop versus

forward current (per diode)

0

20

40

60

80

100

120

140

160

180

200

0 20 40 60 80 100 120 140 160

P(W)

T

δ

=tp/T

tp

δ = 1

δ = 0.05

I (A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0

20

40

60

80

100

120

140

160

180

200

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

I (A)

FM

T =150°C

(typical values)

j

T =25°C

(maximum values)

j

V (V)

FM

T =150°C

(maximum values)

j

Figure 3. Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4. Peak reverse recovery current

versus dI

F

/dt

(typical values, per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Z/R

th(j-c) th(j-c)

t (s)

p

Single pulse

I (A)

RM

0

10

20

30

40

50

60

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

V =400V

T =125°C

R

j

Copyright STMicroelectronics Company Internal Unauthorized reproduction and communication strictly prohibited

Revision

11

Document

CD00043024

IN APPROVAL

/

2.1

6

Draft - Draft - Draft

STTH200L06TV1

STTH200L06TV1

Products related to this Datasheet