Characteristics STTH200L06TV
4/8 Doc ID 10767 Rev 2
Figure 5. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
0
200
400
600
800
1000
1200
1400
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
I =2 x I
F F(AV)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500
Q (µC)
rr
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
Figure 7. Reverse recovery softness factor
versus dI
F
/dt
(typical values, per diode)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 50 100 150 200 250 300 350 400 450 500
S factor
dI /dt(A/µs)
F
I < 2 x I
T =125°C
F F(AV)
j
V =400V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125
I
RM
t
rr
S factor
T (°C)
j
I=I
Reference: T =125°C
F F(AV)
j
V =400V
R
Q
RR
Figure 9. Transient peak forward voltage
versus dI
F
/dt
(typical values, per diode)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values, per diode)
0
1
2
3
4
5
6
7
8
0 50 100 150 200 250 300 350 400 450 500
V (V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
0
50
100
150
200
250
300
350
400
450
500
550
600
0 100 200 300 400 500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
V =1.1 x V max.
FR F
Copyright STMicroelectronics Company Internal Unauthorized reproduction and communication strictly prohibited
Draft - Draft - Draft
