Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
www.vishay.com
5
Vishay Siliconix
Si1867DL
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72534
.
Switching Variation
R2 at V
IN
= 2.5 V, R1 = 300 kΩ
0
10
20
30
40
50
0 20406080 100
R2 (kΩ)
e (µs)m i T
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
f
t
d(off)
t
r
t
d(on)
Switching Variation
R2 at V
IN
= 1.8 V, R1 = 300 kΩ
0
10
20
30
40
50
60
7
020406080 100
R2 (kΩ)
e (µs)miT
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 µF
C
o
= 1 µF
t
f
t
d(off)
t
r
t
d(on)
Safe Operating Area, Junction-to-Ambient
10
0.1 1 10 100
0.01
1 ms
-)A( tnerruC ni
a
r
D
I
D
1
Limited
by R
DS(on)
*
T
A
= 25 °C
Single Pulse
10 ms
100 ms
0.1
1 s, 10 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
e v i
t
c
e
E d e
z
i l a m r o N t n e i s
n
a
r T
e
c n a d e p
m
I l a
m
r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 400 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
