6. Inputs are terminated to V
DD
/2. Input current is dependent on terminating resistance se-
lected in register.
16GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
Electrical Specifications
PDF: 09005aef8479a029
ksf36c2gx72pz.pdf - Rev. I 7/15
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
DRAM Operating Conditions
PDF: 09005aef8479a029
ksf36c2gx72pz.pdf - Rev. I 7/15
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revisions E)
Values are for the MT41K1G4 DDR3 SDRAM only and are computed from values specified in the 4Gb (1 Gig x 4) compo-
nent data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1314 1170 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1422 1350 mA
Precharge power-down current: Slow exit I
DD2P0
2
648 684 mA
Precharge power-down current: Fast exit I
DD2P1
2
1152 1008 mA
Precharge quiet standby current I
DD2Q
2
1152 1008 mA
Precharge standby current I
DD2N
2
1152 1044 mA
Precharge standby ODT current I
DD2NT
1
1026 954 mA
Active power-down current I
DD3P
2
1368 1260 mA
Active standby current I
DD3N
2
1368 1260 mA
Burst read operating current I
DD4R
1
2970 2664 mA
Burst write operating current I
DD4W
1
2448 2178 mA
Refresh current I
DD5B
1
4554 4428 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
720 720 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
900 900 mA
All banks interleaved read current I
DD7
1
4284 3744 mA
Reset current I
DD8
2
720 720 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
16GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef8479a029
ksf36c2gx72pz.pdf - Rev. I 7/15
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MT36KSF2G72PZ-1G4E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 16GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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