IXGT32N60BD1 Datasheet IXGH32N60BD1, IXGT32N60BD1 | P1-P3

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C60A

I

C90

T

C

= 90°C32A

I

CM

T

C

= 25°C, 1 ms 120 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 22 Ω I

CM

= 64 A

(RBSOA) Clamped inductive load @ 0.8 V

CES

P

C

T

C

= 25°C 200 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in.

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Weight TO-247AD 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 250 µA, V

GE

= 0 V 600 V

V

GE(th)

I

C

= 250 µA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 200 µA

V

GE

= 0 V T

J

= 150°C 32N60B 1 mA

32N60BD1 3 mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 2.3 V

HiPerFAST

TM

IGBT V

CES

= 600 V

I

C25

= 60 A

V

CE(sat)

= 2.3 V

t

fi(typ)

= 85 ns

DS98749C(02/03)

C

(TAB)

G

C

E

TO-247 AD

(IXGH)

TO-268

(IXGT)

G

E

C

(TAB)

Features

•International standard packages

•High frequency IGBT and antiparallel

FRED in one package

•High current handling capability

•HiPerFAST

TM

HDMOS

TM

process

•MOS Gate turn-on

-drive simplicity

Applications

•Uninterruptible power supplies (UPS)

•Switched-mode and resonant-mode

power supplies

•AC motor speed control

•DC servo and robot drives

•DC choppers

Advantages

•Space savings (two devices in one

package)

•High power density

•Suitable for surface mounting

•Very low switching losses for high

frequency applications

•Easy to mount with 1 screw,TO-247

(insulated mounting screw hole)

IXGH 32N60B

IXGT 32N60B

IXGH 32N60BD1

IXGT 32N60BD1

(D1)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 15 25 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C

ies

2700 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 32N60B 210 pF

32N60BD1 240 pF

C

res

50 pF

Q

G

110 150 nC

Q

GE

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

23 35 nC

Q

GC

40 75 nC

t

d(on)

25 ns

t

ri

20 ns

t

d(off)

100 200 ns

t

fi

80 150 ns

E

off

0.6 1.2 mJ

t

d(on)

25 ns

t

ri

25 ns

E

on

32N60B 0.3 mJ

32N60BD1 1.0 mJ

t

d(off)

120 ns

t

fi

120 ns

E

off

1.2 mJ

R

thJC

0.62 K/W

R

thCK

TO-247 0.25 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= I

C90

, V

GE

= 0 V, T

J

= 150°C 1.6 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % T

J

= 25°C 2.5 V

I

RM

I

F

= I

C90

, V

GE

= 0 V, -di

F

/dt = 100 A/µs6A

t

rr

V

R

= 360 V T

J

= 125°C 100 ns

I

F

= 1 A; -di/dt = 100 A/µs; V

R

= 30 V T

J

= 25°C25 ns

R

thJC

1.0 K/W

Inductive load, T

J

= 25

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= R

off

= 4.7 Ω

Remarks: Switching times may increase for

V

CE

(Clamp) > 0.8 • V

CES

, higher T

J

or

increased R

G

Inductive load, T

J

= 125

°°

°C

I

C

= I

C90

, V

GE

= 15 V

V

CE

= 0.8 V

CES

, R

G

= R

off

= 4.7 Ω

Remarks: Switching times may

increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

IXGH 32N60B IXGH 32N60BD1

IXGT 32N60B IXGT 32N60BD1

TO-247 AD (IXGH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D

3

PAK)

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A

1

2.7 2.9 .106 .114

A

2

.02 .25 .001 .010

b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

B

V/V

GE(th)

- Normalized

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

T

J

- Degrees C

25 50 75 100 125 150

V

CE (sat)

- Normalized

0.75

1.00

1.25

1.50

1.75

V

CE

- Volts

01234567

I

C

- Amperes

0

20

40

60

80

100

V

GE

- Volts

345678910

I

C

- Amperes

0

20

40

60

80

100

V

CE

- Volts

0246810

I

C

- Amperes

0

40

80

120

160

200

13V

11V

9V

7V

V

CE

= 10V

V

GE

= 15V

13V

11V

9V

7V

T

J

= 25°C

V

GE

= 15V

T

J

= 25°C

I

C

= 16A

I

C

= 32A

I

C

= 64A

T

J

= 125°C

V

GE(th)

I

C

= 250µA

BV

CES

I

C

= 250µA

G32N60B P1

5V

V

GE

= 15V

T

J

= 25°C

V

CE

- Volts

01234567

I

C

- Amperes

0

20

40

60

80

100

T

J

= 125°C

Fig. 6. Temperature Dependence of BV

DSS

& V

GE(th)

Fig. 5. Admittance Curves

Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of V

CE(sat)

Fig. 1. Saturation Voltage Characteristics

Fig. 2. Extended Output Characteristics

IXGH 32N60B IXGH 32N60BD1

IXGT 32N60B IXGT 32N60BD1

IXGT32N60BD1

IXGT32N60BD1

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