IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Fig. 11. Transient Thermal Resistance
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Q
g
- nanocoulombs
0 25 50 75 100 125 150
V
GE
- Volts
0
3
6
9
12
15
R
G
- Ohms
0 102030405060
E
(OFF)
- millijoules
0
1
2
3
4
5
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0
2.5
T
J
= 125°C
I
C
- Amperes
0 20406080
E
(OFF)
- milliJoules
0
1
2
3
4
5
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
= 300V
I
C
= 32A
I
C
= 32A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125°C
R
G
= 4.7Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10Ω
T
J
= 125°C
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 8. Dependence of tfi and E
OFF
on R
G
.
Fig. 7. Dependence of tfi and E
OFF
on I
C
.
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B IXGT 32N60BD1