Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 9: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 10: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
V
REF-
CA(DC)
Input reference voltage command/address bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
REFDQ(DC
)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
I
VTT
Termination reference current from V
TT
–600 – 600 mA
V
TT
Termination reference voltage (DC) – command/
address bus
0.49 × V
DD
-
20mV
0.5 × V
DD
0.51 × V
DD
+
20mV
V 1
I
I
Input leakage current; Any input
0V ≤ V
IN
≤ V
DD
; V
REF
input 0V ≤
V
IN
≤ 0.95V (All other pins not
under test = 0V)
Address inputs,
RAS#, CAS#, WE#,
BA, S#, CKE, ODT,
CK, CK#
– – – µA 5
DM –2 0 2
I
OZ
Output leakage current; 0V ≤
V
OUT
≤ V
DD
; DQ and ODT are dis-
abled; ODT is HIGH
DQ, DQS, DQS# –5 0 5 µA
I
VREF
V
REF
supply leakage current; V
REFDQ
= V
DD
/2 or
V
REFCA
= V
DD
/2 (All other pins not under test = 0V)
–9 0 9 µA
T
A
Module ambient operating tem-
perature
Commercial 0 – 70 °C 2, 3
T
C
DDR3 SDRAM component case
operating temperature
Commercial 0 – 95 °C 2, 3, 4
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s web site.
4. The refresh rate is required to double when 85°C < T
C
≤ 95°C.
5. Inputs are terminated to V
DD
/2. Input current is dependent on terminating resistance se-
lected in register.
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 RDIMM
Electrical Specifications
PDF: 09005aef83b4fcd7
jsf9c128_256_512x72pz.pdf - Rev. J 8/15
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.